Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/2034
Title: Instability phenomena in microcrystalline silicon films
Authors: Finger, Friedhelm
Carius, Reinhard
Dylla, Thorsten
Klein, Stefan
Okur, Salih
Güneş, Mehmet
Okur, Salih
Güneş, Mehmet
Izmir Institute of Technology. Physics
Keywords: Electron Spin Resonance
Instability
Microcrystalline silicon
Absorption mode
Crystalline volume fraction
Issue Date: Feb-2005
Publisher: National Institute of Optoelectronics
Source: Finger, F., Carius, R., Dylla, T., Klein, S., Okur, S., and Güneş, M. (2005). Instability phenomena in microcrystalline silicon films. Journal of Optoelectronics and Advanced Materials, 7(1), 83-90.
Abstract: Microcrystalline silicon (μc-Si:H) for solar cell applications is investigated with respect to the material stability upon treatment of the material in various environments, followed by annealing. The material can be separated into two groups: (i) material with high crystalline volume fractions and pronounced porosity which is susceptible to in-diffusion of atmospheric gases, which, through adsorption or oxidation affect the electronic properties and (ii) compact material with high or low crystalline volume fractions which show considerably less or no influence of treatment in atmospheric gases. We report the investigation of such effects on the stability of μc-Si:H films prepared by plasma enhanced chemical vapour deposition and hot wire chemical vapour deposition.
URI: http://hdl.handle.net/11147/2034
ISSN: 1454-4164
1454-4164
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
Sürdürülebilir Yeşil Kampüs Koleksiyonu / Sustainable Green Campus Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

Files in This Item:
File Description SizeFormat 
2034.pdfConference Paper593.08 kBAdobe PDFThumbnail
View/Open
Show full item record

CORE Recommender

Google ScholarTM

Check


Items in GCRIS Repository are protected by copyright, with all rights reserved, unless otherwise indicated.