Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/2033
Title: Sub-bandgap absorption spectroscopy and minority carrier transport properties of hydrogenated microcrystalline silicon thin films
Authors: Güneş, Mehmet
Göktaş, Oktay
Okur, Salih
Işık, Nebile
Carius, Reinhard
Klomfaß, Josef
Finger, Friedhelm
Güneş, Mehmet
Göktaş, Oktay
Okur, Salih
Işık, Nebile
Izmir Institute of Technology. Physics
Keywords: Dual beam photoconductivity
Hydrogenated microcrystalline silicon
Steady-state photocarrier grating
Sub-bandgap absorption
Thin films
Issue Date: Feb-2005
Publisher: National Institute of Optoelectronics
Source: Güneş, M., Göktaş, O., Okur, S., Işık, N., Carius, R., Klomfaß, J., and Finger, F. (2005). Sub-bandgap absorption spectroscopy and minority carrier transport properties of hydrogenated microcrystalline silicon thin films. Journal of Optoelectronics and Advanced Materials, 7(1), 161-168.
Abstract: Hydrogenated microcrystalline silicon thin films have been prepared using HW-CVD and VHF-PECVD techniques with different silane concentrations. The steady-state photoconductivity, dual beam photoconductivity, photothermal deflection spectroscopy and steady-state photocarrier grating (SSPG) methods have been used to investigate the optical and electronic properties of the films. Two different sub-bandgap absorption methods have been applied and analyzed to obtain a better insight into the electronic states involved. For some films, differences existed in the optical absorption spectra when the measurements were carried out through the film side and through the substrate side. In addition, for some films, fringe patterns remained on the spectrum after the calculation of the fringe free absorption spectrum, which indicates that structural inhomogeneities were present throughout the film. Finally, minority carrier diffusion lengths deduced from the SSPG measurements were investigated as a function of the crystalline volume fraction (I c RS) obtained from Raman spectroscopy. The longest diffusion lengths and lowest sub-bandgap absorption coefficients were obtained for films deposited in the region of the transition to the amorphous growth.
URI: http://hdl.handle.net/11147/2033
ISSN: 1454-4164
1454-4164
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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