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https://hdl.handle.net/11147/2029
Title: | Light Induced Degradation of Hydrogenated Amorphous Silicon - Germanium Alloy (a-Sige:h) Thin Films | Authors: | Dönertaş, M. Elif Güneş, Mehmet |
Keywords: | Absorption coefficient Hydrogenated silicon germanium alloys Photoconductivity Staebler-Wronski effect Amorphous silicon |
Publisher: | National Institute of Optoelectronics | Source: | Dönertaş, M. E., and Güneş, M. (2005). Light induced degradation of hydrogenated amorphous silicon - Germanium alloy (a-SiGe:H) thin films. Journal of Optoelectronics and Advanced Materials, 7(1), 503-506. | Abstract: | Hydrogenated amorphous silicon germanium alloy thin films prepared by Plasma Enhanced Chemical Vapor Deposition (PECVD) with varying Germanium concentrations have been investigated in both the annealed and the light soaked state. Samples were characterized using steady state photoconductivity and dual beam photoconductivity (DBP). The Staebler-Wronski effect has been investigated by monitoring the changes in the photoconductivity, σ ph, and the increase in the sub-bandgap absorption coefficient, α. The kinetics of defect creation for different germanium contents has also been compared with those for unalloyed hydrogenated amorphous silicon films. It is found that for the films with low Ge fraction, both a decrease in the photoconductivity and an increase in α (1.0eV) show similar time dependences to those observed in a-Si:H films. However, as the Ge content increases, σ ph degrades faster and the same time dependence is not seen in the increase of α(1.0eV). | URI: | http://hdl.handle.net/11147/2029 | ISSN: | 1454-4164 1454-4164 |
Appears in Collections: | Physics / Fizik Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection |
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