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https://hdl.handle.net/11147/12158
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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Fidan, Mehmet | en_US |
dc.contributor.author | Ünverdi, Özhan | en_US |
dc.contributor.author | Çelebi, Cem | en_US |
dc.date.accessioned | 2022-07-18T08:07:00Z | - |
dc.date.available | 2022-07-18T08:07:00Z | - |
dc.date.issued | 2022-05 | - |
dc.identifier.issn | 7342101 | - |
dc.identifier.uri | https://doi.org/10.1116/6.0001758 | - |
dc.identifier.uri | https://hdl.handle.net/11147/12158 | - |
dc.description.abstract | The impact of the number of graphene layers on the spectral responsivity and response speed of graphene/n-type Si (Gr/n-Si)-based Schottky barrier photodiodes is investigated. Gr/n-Si photodiode devices are fabricated by transferring chemical vapor deposition-grown graphene layers one by one on n-Si substrates, reaching up to three graphene layers. The devices show a clear rectifying Schottky character and have a maximum responsivity at a peak wavelength of 905 nm. Wavelength-resolved and time-dependent photocurrent measurements demonstrated that both spectral responsivity and response speed are enhanced as the number of graphene layers is increased from 1 to 3 on n-Si substrates. For example, the spectral responsivity and the response speed of the fabricated device were found to be improved by about 15% (e.g., from 0.65 to 0.75 AW-1) and 50% (e.g., 14 to 7 μs), respectively, when three graphene layers are used as the hole-collecting cathode electrode. The experimentally obtained results showed that the device parameters, such as spectral responsivity and response speed of Gr/n-Si Schottky barrier photodiodes, can be boosted simply by increasing the number of graphene layers on n-Si substrates. | en_US |
dc.language.iso | en | en_US |
dc.publisher | AVS | en_US |
dc.relation.ispartof | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films | en_US |
dc.rights | info:eu-repo/semantics/embargoedAccess | en_US |
dc.subject | Chemical vapor deposition | en_US |
dc.subject | Electrodes | en_US |
dc.subject | Image enhancement | en_US |
dc.title | Enhancing the photo-response characteristics of graphene/n-Si based Schottky barrier photodiodes by increasing the number of graphene layers | en_US |
dc.type | Article | en_US |
dc.authorid | 0000-0002-8466-2719 | en_US |
dc.authorid | 0000-0003-1070-1129 | - |
dc.institutionauthor | Fidan, Mehmet | en_US |
dc.institutionauthor | Çelebi, Cem | en_US |
dc.department | İzmir Institute of Technology. Physics | en_US |
dc.identifier.wos | WOS:000791259700002 | en_US |
dc.identifier.scopus | 2-s2.0-85129195830 | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
dc.identifier.doi | 10.1116/6.0001758 | - |
dc.contributor.affiliation | Izmir Institute of Technology | en_US |
dc.contributor.affiliation | Yaşar Üniversitesi | en_US |
dc.contributor.affiliation | Izmir Institute of Technology | en_US |
dc.relation.issn | 7342101 | en_US |
dc.description.volume | 40 | en_US |
dc.description.issue | 3 | en_US |
dc.identifier.wosquality | N/A | - |
dc.identifier.scopusquality | N/A | - |
item.languageiso639-1 | en | - |
item.openairecristype | http://purl.org/coar/resource_type/c_18cf | - |
item.fulltext | With Fulltext | - |
item.grantfulltext | embargo_20250701 | - |
item.cerifentitytype | Publications | - |
item.openairetype | Article | - |
crisitem.author.dept | 04.05. Department of Pyhsics | - |
Appears in Collections: | Physics / Fizik Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection |
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6.0001758.pdf Until 2025-07-01 | Article | 2.47 MB | Adobe PDF | View/Open Request a copy |
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