Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/12158
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dc.contributor.authorFidan, Mehmeten_US
dc.contributor.authorÜnverdi, Özhanen_US
dc.contributor.authorÇelebi, Cemen_US
dc.date.accessioned2022-07-18T08:07:00Z-
dc.date.available2022-07-18T08:07:00Z-
dc.date.issued2022-05-
dc.identifier.issn7342101-
dc.identifier.urihttps://doi.org/10.1116/6.0001758-
dc.identifier.urihttps://hdl.handle.net/11147/12158-
dc.description.abstractThe impact of the number of graphene layers on the spectral responsivity and response speed of graphene/n-type Si (Gr/n-Si)-based Schottky barrier photodiodes is investigated. Gr/n-Si photodiode devices are fabricated by transferring chemical vapor deposition-grown graphene layers one by one on n-Si substrates, reaching up to three graphene layers. The devices show a clear rectifying Schottky character and have a maximum responsivity at a peak wavelength of 905 nm. Wavelength-resolved and time-dependent photocurrent measurements demonstrated that both spectral responsivity and response speed are enhanced as the number of graphene layers is increased from 1 to 3 on n-Si substrates. For example, the spectral responsivity and the response speed of the fabricated device were found to be improved by about 15% (e.g., from 0.65 to 0.75 AW-1) and 50% (e.g., 14 to 7 μs), respectively, when three graphene layers are used as the hole-collecting cathode electrode. The experimentally obtained results showed that the device parameters, such as spectral responsivity and response speed of Gr/n-Si Schottky barrier photodiodes, can be boosted simply by increasing the number of graphene layers on n-Si substrates.en_US
dc.language.isoenen_US
dc.publisherAVSen_US
dc.relation.ispartofJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Filmsen_US
dc.rightsinfo:eu-repo/semantics/embargoedAccessen_US
dc.subjectChemical vapor depositionen_US
dc.subjectElectrodesen_US
dc.subjectImage enhancementen_US
dc.titleEnhancing the photo-response characteristics of graphene/n-Si based Schottky barrier photodiodes by increasing the number of graphene layersen_US
dc.typeArticleen_US
dc.authorid0000-0002-8466-2719en_US
dc.authorid0000-0003-1070-1129-
dc.institutionauthorFidan, Mehmeten_US
dc.institutionauthorÇelebi, Cemen_US
dc.departmentİzmir Institute of Technology. Physicsen_US
dc.identifier.wosWOS:000791259700002en_US
dc.identifier.scopus2-s2.0-85129195830en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.doi10.1116/6.0001758-
dc.contributor.affiliationIzmir Institute of Technologyen_US
dc.contributor.affiliationYaşar Üniversitesien_US
dc.contributor.affiliationIzmir Institute of Technologyen_US
dc.relation.issn7342101en_US
dc.description.volume40en_US
dc.description.issue3en_US
dc.identifier.wosqualityN/A-
dc.identifier.scopusqualityN/A-
item.languageiso639-1en-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.fulltextWith Fulltext-
item.grantfulltextembargo_20250701-
item.cerifentitytypePublications-
item.openairetypeArticle-
crisitem.author.dept04.05. Department of Pyhsics-
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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