Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/12145
Title: Light-induced modification of the Schottky barrier height in graphene/Si based near-infrared photodiodes
Authors: Fidan, Mehmet
Dönmez, Gülçin
Yanılmaz, Alper
Ünverdi, Özhan
Çelebi, Cem
Keywords: CVD graphene
Near-infrared photodiode
Open-circuit voltage
Schottky photodiode
Publisher: Elsevier
Abstract: The impact of light on the Schottky barrier height (SBH) in p-type graphene/n-type Si (p-Gr/n-Si) based near-infrared photodiodes is investigated. Hall effect and optoelectronic transport measurements carried out under illumination of 905 nm wavelength light showed that zero-bias SBH in such photodiodes can be effectively tuned in a range between 0.7 and 0.9 eV consistent with the variation in their open-circuit voltage. Shockley-Read-Hall model, which considers the charge recombination through mid-gap and interface states at the p-Gr/n-Si heterojunction, is used to explain the experimentally observed nonlinear dependence of SBH on the incident light. Light induced tunability of SBH at the graphene/semiconductor heterojunction is of great importance especially for the development of new generation optically driven devices in which graphene acts as a functioning element.
URI: https://doi.org/10.1016/j.infrared.2022.104165
https://hdl.handle.net/11147/12145
Appears in Collections:Photonics / Fotonik
Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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