Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/10396
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dc.contributor.authorPlumadore, Ryan-
dc.contributor.authorBoddison-Chouinard, Justin-
dc.contributor.authorLopinski, Gregory-
dc.contributor.authorModarresi, Mohsen-
dc.contributor.authorPotasz, Pawel-
dc.contributor.authorLuican-Mayer, Adina-
dc.contributor.authorBaşkurt, Mehmet-
dc.contributor.authorŞahin, Hasan-
dc.date.accessioned2021-01-24T18:34:32Z-
dc.date.available2021-01-24T18:34:32Z-
dc.date.issued2020-
dc.identifier.issn2469-9950-
dc.identifier.issn2469-9969-
dc.identifier.urihttps://doi.org/10.1103/PhysRevB.102.205408-
dc.identifier.urihttps://hdl.handle.net/11147/10396-
dc.description.abstractAtomic scale defects in semiconductors enable their technological applications and realization of different quantum states. Using scanning tunneling microscopy and spectroscopy complemented by ab initio calculations we determine the nature of defects in the anisotropic van der Waals layered semiconductor ReS2. We demonstrate the in-plane anisotropy of the lattice by directly visualizing chains of rhenium atoms forming diamond-shaped clusters. Using scanning tunneling spectroscopy we measure the semiconducting gap in the density of states. We reveal the presence of lattice defects and by comparison of their topographic and spectroscopic signatures with ab initio calculations we determine their origin as oxygen atoms absorbed at lattice point defect sites. These results provide an atomic-scale view into the semiconducting transition metal dichalcogenides, paving the way toward understanding and engineering their properties.en_US
dc.description.sponsorshipThe authors acknowledge funding from National Sciences and Engineering Research Council (NSERC) Discovery Grant No. RGPIN-2016-06717. We also acknowledge the support of the Natural Sciences and Engineering Research Council of Canada (NSERC) through QC2DM Strategic Project No. STPGP 521420. P.H. thanks uOttawa Research Chair in Quantum Theory of Materials for support. P.P. acknowledges partial financial support from National Science Center (NCN), Poland, Grant Maestro No. 2014/14/A/ST3/00654, and calculations were performed in theWroclaw Center for Networking and Supercomputing. H.S. acknowledges financial support from TUBITAK under Project No. 117F095 and from Turkish Academy of Sciences under the GEBIP program. Our computational resources were provided by TUBITAK ULAKBIM, High Performance and Grid Computing Center (TR-Grid eInfrastructure).en_US
dc.language.isoenen_US
dc.publisherAmerican Physical Societyen_US
dc.relation.ispartofPhysical Review Ben_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.titlePrevalence of Oxygen Defects in an In-Plane Anisotropic Transition Metal Dichalcogenideen_US
dc.typeArticleen_US
dc.institutionauthorBaşkurt, Mehmet-
dc.institutionauthorŞahin, Hasan-
dc.departmentİzmir Institute of Technology. Photonicsen_US
dc.identifier.volume102en_US
dc.identifier.issue20en_US
dc.identifier.wosWOS:000587595800007-
dc.identifier.scopus2-s2.0-85096118749-
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.doi10.1103/PhysRevB.102.205408-
dc.relation.doi10.1103/PhysRevB.102.205408en_US
dc.coverage.doi10.1103/PhysRevB.102.205408-
dc.identifier.wosqualityQ2-
dc.identifier.scopusqualityQ2-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.languageiso639-1en-
item.openairetypeArticle-
item.grantfulltextopen-
item.fulltextWith Fulltext-
item.cerifentitytypePublications-
crisitem.author.dept04.04. Department of Photonics-
Appears in Collections:Photonics / Fotonik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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