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|Title:||Adsorbate-induced enhancement of the spectral response in graphene/silicon-based Schottky barrier photodetectors||Authors:||Sahan, N.
Izmir Institute of Technology. Physics
|Issue Date:||2020||Publisher:||Springer Verlag||Abstract:||The impact of atmospheric adsorbates on the spectral response and response speed of p-type graphene/n-type Silicon (p-Gr/n-Si) based Schottky barrier photodetectors are investigated. Wavelength resolved photocurrent and transient photocurrent spectroscopy measurements conducted under high-vacuum conditions revealed that the atmospheric adsorbates such as O-2 and H2O stuck on graphene electrode lead to hole doping in graphene and therefore shift its Fermi level towards higher energy states below its Dirac point. Such a shift in graphene's Fermi level due to adsorbates increases the zero-bias Schottky barrier height of the p-Gr/n-Si heterojunction from 0.71 to 0.78 eV. Adsorbate induced increment in the barrier height promotes the separation of photo-generated charge carriers at the depletion region and leads to an improvement in the maximum spectral response (e.g., from 0.39 to 0.46 AW(-1)) and response speed of the p-Gr/n-Si photodetector in the near-infrared region. The experimentally obtained results are expected to give an insight into the adsorbate related variations in the rectification and photo-response characters of the heterojunctions of graphene and other 2D materials with different semiconductors.||URI:||https://doi.org/10.1007/s00339-020-04120-1
|Appears in Collections:||Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection|
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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