Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/10234
Full metadata record
DC FieldValueLanguage
dc.contributor.authorKetroussi, K.-
dc.contributor.authorCherfi, R.-
dc.contributor.authorYahia, Seba, H.-
dc.contributor.authorTata, S.-
dc.contributor.authorChabane, L.-
dc.contributor.authorÖzyüzer, Lütfi-
dc.contributor.authorRahal, A.-
dc.date.accessioned2021-01-24T18:33:09Z-
dc.date.available2021-01-24T18:33:09Z-
dc.date.issued2020-
dc.identifier.issn1350-4495-
dc.identifier.urihttps://doi.org/10.1016/j.infrared.2020.103556-
dc.identifier.urihttps://hdl.handle.net/10234-
dc.description.abstractThe objective of this study is to investigate the effect of boron doping concentration on the bolometric properties of lightly hydrogenated amorphous silicon doped with boron (a-Si: H(B)) films. Thin film a-Si: H(B) samples with different boron concentrations are prepared by co-sputtering of boron and silicon at relatively low hydrogen pressure. FTIR analyses show that the intensity of the characteristic peak of the substitutional boron gradually increases with the addition of boron. Increasing in boron concentration affects the bolometric properties of the lightly hydrogenated a-Si: H (B) films, including conductivity at room temperature (?RT) and thermal resistance coefficient (TCR). Indeed, when the boron concentration increases from 1.5 to 43%, ?RT increases from 1.4 10?6 to 2 10?3 ??1 cm?1 while the absolute value of TCR decreases from 3% to 8% K?1, respectively. In addition, lightly hydrogenated a-Si: H (B) films exhibit good thermal stability. We have showed in this study that lightly hydrogenated a-Si: H(B) can be considered as a potential candidate for low-cost, high-performance uncooled micro bolometers. © 2020 Elsevier B.V.en_US
dc.description.sponsorshipThe authors gratefully acknowledge the financial support from General Direction of Scientific Research and Technological Development, Algeria (DGRSDT/MESRS).en_US
dc.language.isoenen_US
dc.publisherElsevier Ltd.en_US
dc.relation.ispartofInfrared Physics and Technologyen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjecta-Si: H(B) lightly hydrogenateden_US
dc.subjectConductivityen_US
dc.subjectMicro bolometersen_US
dc.subjectThermal resistance coefficienten_US
dc.subjectThermal stabilityen_US
dc.titleStudy of boron doped amorphous silicon lightly hydrogenated prepared by DC magnetron sputtering for infrared detectors applicationsen_US
dc.typeArticleen_US
dc.institutionauthorÖzyüzer, Lütfi-
dc.departmentİzmir Institute of Technology. Physicsen_US
dc.identifier.wosWOS:000694913300004en_US
dc.identifier.scopus2-s2.0-85096819655en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.doi10.1016/j.infrared.2020.103556-
dc.contributor.affiliation01. Izmir Institute of Technology-
dc.relation.doi10.1016/j.infrared.2020.103556en_US
dc.coverage.doi10.1016/j.infrared.2020.103556en_US
dc.identifier.wosqualityQ2-
dc.identifier.scopusqualityQ2-
item.grantfulltextnone-
item.cerifentitytypePublications-
item.fulltextNo Fulltext-
item.openairetypeArticle-
item.languageiso639-1en-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
crisitem.author.dept04.05. Department of Pyhsics-
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
Show simple item record



CORE Recommender

SCOPUSTM   
Citations

5
checked on Jul 12, 2024

WEB OF SCIENCETM
Citations

5
checked on Jul 13, 2024

Page view(s)

120
checked on Jul 15, 2024

Google ScholarTM

Check




Altmetric


Items in GCRIS Repository are protected by copyright, with all rights reserved, unless otherwise indicated.