Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/12145
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dc.contributor.authorFidan, Mehmeten_US
dc.contributor.authorDönmez, Gülçinen_US
dc.contributor.authorYanılmaz, Alperen_US
dc.contributor.authorÜnverdi, Özhanen_US
dc.contributor.authorÇelebi, Cemen_US
dc.date.accessioned2022-07-06T13:43:37Z-
dc.date.available2022-07-06T13:43:37Z-
dc.date.issued2022-06-
dc.identifier.issn1350-4495-
dc.identifier.urihttps://doi.org/10.1016/j.infrared.2022.104165-
dc.identifier.urihttps://hdl.handle.net/11147/12145-
dc.description.abstractThe impact of light on the Schottky barrier height (SBH) in p-type graphene/n-type Si (p-Gr/n-Si) based near-infrared photodiodes is investigated. Hall effect and optoelectronic transport measurements carried out under illumination of 905 nm wavelength light showed that zero-bias SBH in such photodiodes can be effectively tuned in a range between 0.7 and 0.9 eV consistent with the variation in their open-circuit voltage. Shockley-Read-Hall model, which considers the charge recombination through mid-gap and interface states at the p-Gr/n-Si heterojunction, is used to explain the experimentally observed nonlinear dependence of SBH on the incident light. Light induced tunability of SBH at the graphene/semiconductor heterojunction is of great importance especially for the development of new generation optically driven devices in which graphene acts as a functioning element.en_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofInfrared Physics and Technologyen_US
dc.rightsinfo:eu-repo/semantics/embargoedAccessen_US
dc.subjectSchottky photodiode-
dc.subjectCVD grapheneen_US
dc.subjectNear-infrared photodiodeen_US
dc.subjectOpen-circuit voltageen_US
dc.titleLight-induced modification of the Schottky barrier height in graphene/Si based near-infrared photodiodesen_US
dc.typeArticleen_US
dc.authorid0000-0002-8466-2719en_US
dc.authorid0000-0003-1070-1129-
dc.institutionauthorFidan, Mehmeten_US
dc.institutionauthorDönmez, Gülçinen_US
dc.institutionauthorYanılmaz, Alperen_US
dc.institutionauthorÇelebi, Cemen_US
dc.departmentİzmir Institute of Technology. Photonicsen_US
dc.departmentİzmir Institute of Technology. Physicsen_US
dc.identifier.wosWOS:000793741300004en_US
dc.identifier.scopus2-s2.0-85127769892en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.doi10.1016/j.infrared.2022.104165-
dc.contributor.affiliationIzmir Institute of Technologyen_US
dc.contributor.affiliationIzmir Institute of Technologyen_US
dc.contributor.affiliationIzmir Yüksek Teknoloji Enstitüsüen_US
dc.contributor.affiliationYaşar Üniversitesien_US
dc.contributor.affiliationIzmir Institute of Technologyen_US
dc.relation.issn1350-4495en_US
dc.description.volume123en_US
dc.identifier.wosqualityQ2-
dc.identifier.scopusqualityQ2-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.languageiso639-1en-
item.cerifentitytypePublications-
item.grantfulltextembargo_20250701-
item.openairetypeArticle-
item.fulltextWith Fulltext-
crisitem.author.dept04.05. Department of Pyhsics-
Appears in Collections:Photonics / Fotonik
Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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