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dc.contributor.authorTurkoglu, Fulya
dc.contributor.authorKoseoglu, Hasan
dc.contributor.authorCantas, Ayten
dc.contributor.authorAkca, Fatime G.
dc.contributor.authorMeric, Ece
dc.contributor.authorBuldu, Dilara G.
dc.contributor.authorAygun, Gulnur
dc.date.accessioned2020-07-25T22:03:46Z
dc.date.available2020-07-25T22:03:46Z
dc.date.issued2019
dc.identifier.issn0040-6090
dc.identifier.urihttps://doi.org/10.1016/j.tsf.2018.12.001
dc.identifier.urihttps://hdl.handle.net/11147/9103
dc.descriptionCANTAS, Ayten/0000-0002-6536-5516en_US
dc.descriptionWOS: 000454719000002en_US
dc.description.abstractCopper zinc fin sulfide (CZTS) absorber layer attracts so much attention in photovoltaic industry since it contains earth abundant, low cost and non-toxic elements contrary to other chalcogenide based solar cells. In the present work, CZTS absorber layers were prepared following a two-stage process: firstly, a stack of metal precursors (Copper (Cu)/Tin (Sn)/Zinc (Zn)/Copper (Cu)) were deposited on molybdenum (Mo) substrate by magnetron sputtering, then this stack was annealed under S atmosphere inside a tubular furnace. CZTS thin films were investigated using energy dispersive X-ray spectroscopy, X-ray diffraction, scanning electron microscopy and Raman spectroscopy. The effect of sulfurization time and the thickness of top and bottom Cu layer in precursors on the properties of CZTS thin films were investigated. The importance of Cu thickness adjacent to Sn to avoid detrimental phases was addressed. The significance of sulfurization time to restrict the Sn and Zn losses, formation of oxides such as fin dioxide and zinc oxide, and formation of molybdenum disulfide and voids between Mo/CZTS interface was also addressed. Moreover, cadmium sulfide buffer layer, which is conventionally used in CZTS solar cells, is replaced by an environmentally friendly alternative zinc oxysulfide buffer layer.en_US
dc.language.isoengen_US
dc.publisherElsevier Science Saen_US
dc.relation.isversionof10.1016/j.tsf.2018.12.001en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectCopper zinc tin sulfideen_US
dc.subjectZinc oxysulfideen_US
dc.subjectAbsorber layeren_US
dc.subjectBuffer layeren_US
dc.subjectMagnetron sputteringen_US
dc.titleEffect of defects and secondary phases in Cu2ZnSnS4 absorber material on the performance of Zn(O,S) buffered devicesen_US
dc.typearticleen_US
dc.relation.journalThin Solid Filmsen_US
dc.contributor.departmentIzmir Institute of Technologyen_US
dc.identifier.volume670en_US
dc.identifier.startpage6en_US
dc.identifier.endpage16en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.cont.department-temp[Turkoglu, Fulya; Koseoglu, Hasan; Cantas, Ayten; Akca, Fatime G.; Meric, Ece; Buldu, Dilara G.; Tarhan, Enver; Ozyuzer, Lutfi; Aygun, Gulnur] Izmir Inst Technol, Dept Phys, TR-35430 Izmir, Turkey; [Ozdemir, Mehtap; Ozyuzer, Lutfi] Teknoma Technol Mat Ltd, IZTEKGEB, IYTE Campus, Izmir, Turkey; [Cantas, Ayten] Pamukkale Univ, Dept Elect & Energy, TR-20160 Kinikli, Denizli, Turkeyen_US


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