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1/f noise in amorphous silicon and silicon-germanium alloys

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Conference Paper (243.5Kb)
Date
2003
Author
Johanson, Robert E.
Güneş, Mehmet
Kasap, Safa O.
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Abstract
We report measurements of conductance noise of a-Si1-XGeX:H in two different geometries; one where the current flow is transverse to the surface and the other longitudinal to it. Because of the large increase in sample resistance in going from transverse to longitudinal conduction, it was not possible to measure both geometries at the same temperature. However, the temperature trends are compatible with a common noise source. For both geometries, alloying with up to 40% Ge reduces the noise magnitude by a factor of 50 over that found in a-Si:H
URI
http://doi.org/10.1117/12.497096
http://hdl.handle.net/11147/6496
Collections
  • Physics / Fizik [414]
  • Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection [3276]
  • WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection [2953]


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