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Analysis of electronic parameters and interface states of boron dispersed triethanolamine/p-Si structure by AFM, I-V, C-V-f and G/ω-V-f techniques
The electronic parameters and interface state properties of boron dispersed triethanolamine/p-Si structure have been investigated by atomic force microscopy, I-V, C-V-f and G/ω-V-f techniques. The surface topography and ...
High-mobility pentacene phototransistor with nanostructured SiO2 gate dielectric synthesized by sol-gel method
We have fabricated a pentacene based phototransistor by employing a modified nanostructured SiO2 gate dielectric. The photosensing properties of the pentacene thin film transistor fabricated on n-Si substrate with ...
Modification of metal/semiconductor junctions by self-assembled monolayer organic films
Two new metal/molecule/semiconductor contacts, Au/n-Si/TDA/Au and Au/p-Si/ODM/Au, were fabricated to understand effect of organic compounds, tridecylamine and octadecylmercaptan self-assembled monolayer (SAM) films, on ...
Electrical and interface properties of Au/DNA/n-Si organic-on-inorganic structures
The effect of the thickness and coverage rate of a DNA film on the electrical and interface properties of Au/DNA/n-Si organic-on-inorganic structures has been investigated. The thin film properties of the DNA deposited on ...
Analysis of interface states of the pentacene organic thin-film phototransistor by conductance technique
A pentacene thin-film transistor with a channel width of 300 μm and a channel length of 30 μm has been successfully fabricated on n-Si substrate with thermally oxidized SiO2 as a gate insulator. The photovoltaic and interface ...