Now showing items 1-2 of 2
Minority carrier properties of microcrystalline silicon thin films grown by HW-CVD and VHF-PECVD techniques
(National Institute of Optoelectronics, 2005-02)
Opto-electronic properties of μc-Si:H films prepared by hot-wire/catalytic chemical vapor deposition (HWCVD) and very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) techniques with various silane ...
Effect of aromatic SAMs molecules on graphene/silicon schottky diode performance
(Electrochemical Society, 2016)
Au/n-Si/Graphene/Au Schottky diodes were fabricated by transferring atmospheric pressure chemical vapor deposited (APCVD) graphene on silicon substrates. Graphene/n-Si interface properties were improved by using ...