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dc.contributor.advisorYalçin, Şerife Hanimen
dc.contributor.authorÖrer, Sabihaen
dc.date.accessioned2014-07-22T13:52:54Z
dc.date.available2014-07-22T13:52:54Z
dc.date.issued2008en
dc.identifier.urihttp://hdl.handle.net/11147/3994
dc.descriptionThesis (Master)--İzmir Institute of Technology, Chemistry, İzmir, 2008en
dc.descriptionIncludes bibliographical references (leaves: 46-49)en
dc.descriptionText in English; Abstract: Turkish and Englishen
dc.descriptionix, 49 leavesen
dc.description.abstractLaser Induced Breakdown Spectroscopy, LIBS, is a versatile atomic emission spectrometric technique for the determination of the elemental composition of solids, liquids, gases and aerosols with the need for little or no sample preparation.In this study, an optical LIBS system from its conventional parts was designed, constructed and optimized for spectrochemical analysis of solid materials. Specifically, the 2-D elemental distribution of Ge ions on silicon oxide surfaces, prepared by the method of ion implantation, with differing atomic concentrations between 1016 - 1017 ions/cm2 have been investigated by LIBS. For this purpose a Nd: YAG laser operating at the second harmonic wavelength, 532 nm, was used to create a plasma on the material surfaces. Spatially and temporally resolved atomic emission from the luminous plasma was detected by an Echelle spectroctrograph and Intensified Charged Coupled Device (ICCD) detector combination. Spectral emission intensity from the LIBS measurements has been optimized with respect to time, crater size, ablation depth and laser energy. Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM) coupled with Energy Dispersive X-Ray Spectroscopy (EDX) have been utilized to obtain crater depth, morphology and elemental composition of the sample material, respectively. LIBS spectral data revealed the possibility of performing 2-D distribution analysis of Ge ions over the silicon oxide substrate at Ge ion concentrations lower than 0.5% (atomic). LIBS as a fast semi-quantitative analysis method with 50.m lateral and 800 nm depth resolutions has been evaluated. In this wok, elemental analysis of some metal surfaces, such as Al and Cu, was also performed by LIBS.Keywords: LIBS, surface analysis, Ge ion implantation, lateral resolution,en
dc.language.isoengen
dc.publisherİzmir Institute of Technologyen
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subject.lccQD96.L3 O669 2008en
dc.subject.lcshLaser spectroscopyen
dc.subject.lcshLaser-induced breakdown spectroscopyen
dc.subject.lcshSurfaces (Technology)--Analysisen
dc.subject.lcshIon implantationen
dc.titleCharacterization of ion implanted surfaces by laser induced breakdown spectroscopy, LIBSen
dc.typemasterThesisen
dc.contributor.departmentİzmir Institute of Technology. Chemistryen
dc.relation.publicationcategoryTezen_US


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