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dc.contributor.authorŞahin, D.
dc.contributor.authorYıldız, İlker
dc.contributor.authorGençer İmer, Arife
dc.contributor.authorAygün, Gülnur
dc.contributor.authorSlaoui, A.
dc.contributor.authorTuran, Raşit
dc.date.accessioned2017-01-13T12:27:42Z
dc.date.available2017-01-13T12:27:42Z
dc.date.issued2010-02
dc.identifier.citationŞahin, D., Yıldız, İ., Gençer İmer, A., Aygün, G., Slaoui, A., and Turan, R. (2010). Evolution of SiO2/Ge/HfO2(Ge) multilayer structure during high temperature annealing. Thin Solid Films, 518(9), 2365-2369. doi:10.1016/j.tsf.2009.09.156en_US
dc.identifier.issn0040-6090
dc.identifier.urihttp://doi.org/10.1016/j.tsf.2009.09.156
dc.identifier.urihttp://hdl.handle.net/11147/2785
dc.description.abstractUse of germanium as a storage medium combined with a high-k dielectric tunneling oxide is of interest for non-volatile memory applications. The device structure consists of a thin HfO2 tunneling oxide with a Ge layer either in the form of continuous layer or discrete nanocrystals and relatively thicker SiO2 layer functioning as a control oxide. In this work, we studied interface properties and formation kinetics in SiO2/Ge/HfO2(Ge) multilayer structure during deposition and annealing. This material structure was fabricated by magnetron sputtering and studied by depth profiling with XPS and by Raman spectroscopy. It was observed that Ge atoms penetrate into HfO2 layer during the deposition and segregate out with annealing. This is related to the low solubility of Ge in HfO2 which is observed in other oxides as well. Therefore, Ge out diffusion might be an advantage in forming well controlled floating gate on top of HfO2. In addition we observed the Ge oxidation at the interfaces, where HfSiOx formation is also detected. © 2009 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipTÜBİTAK; Chalmers University of Technologyen_US
dc.language.isoengen_US
dc.publisherElsevieren_US
dc.relation.isversionof10.1016/j.tsf.2009.09.156en_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectGermaniumen_US
dc.subjectDepth profilingen_US
dc.subjectRaman spectroscopyen_US
dc.subjectSegregationen_US
dc.subjectX ray photoelectron spectroscopyen_US
dc.titleEvolution of SiO2/Ge/HfO2(Ge) multilayer structure during high temperature annealingen_US
dc.typearticleen_US
dc.contributor.authorIDTR39698en_US
dc.contributor.institutionauthorAygün, Gülnur
dc.relation.journalThin Solid Filmsen_US
dc.contributor.departmentIzmir Institute of Technology. Physicsen_US
dc.identifier.volume518en_US
dc.identifier.issue9en_US
dc.identifier.startpage2365en_US
dc.identifier.endpage2369en_US
dc.identifier.wosWOS:000275615100017
dc.identifier.scopusSCOPUS:2-s2.0-76049126992
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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