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dc.contributor.authorUlucan, Savaş
dc.contributor.authorAygün, Gülnur
dc.contributor.authorÖzyüzer, Lütfi
dc.contributor.authorEğilmez, Mehmet
dc.contributor.authorTuran, Raşit
dc.date.accessioned2016-08-02T08:35:23Z
dc.date.available2016-08-02T08:35:23Z
dc.date.issued2005-02
dc.identifier.citationUlucan, S., Aygün, G., Özyüzer, L., Eğilmez, M., and Turan, R. (2005). Properties of reactive O2 ion beam sputtered TiO2 on Si wafers. Journal of Optoelectronics and Advanced Materials, 7(1), 297-300.en_US
dc.identifier.issn1454-4164
dc.identifier.urihttp://hdl.handle.net/11147/2031
dc.description.abstractTiO2 thin films were deposited on silicon (100) p-type wafers, using the reactive ion beam sputtering method in high vacuum as an alternative to conventional Argon ion beam sputtering in an O2 environment. Oxygen ions with 1000 eV energy were formed in a thruster and bombarded a high purity Ti target. The molecules of TiO2 were deposited on a Si (100) wafer at various substrate temperatures. The structural and optical properties were analyzed using Fourier Transform Infrared Spectroscopy in the range of 400-4000 cm-1. An ellipsometer was used to measure the thickness and refractive index of the deposited films. In order to determine the dielectric constant and capacitance of the deposited TiO2, the electrical properties were studied using an MOS capacitor. The effects of substrate temperature and deposition time on the dielectric properties of TiO2 are discussed.en_US
dc.language.isoengen_US
dc.publisherNational Institute of Optoelectronicsen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectCMOSen_US
dc.subjectIon Beam Depositionen_US
dc.subjectSilicon wafersen_US
dc.subjectOptical chemical sensorsen_US
dc.titleProperties of reactive O2 ion beam sputtered TiO2 on Si wafersen_US
dc.typeconferenceObjecten_US
dc.contributor.authorIDTR39698en_US
dc.contributor.authorIDTR5135en_US
dc.contributor.iztechauthorUlucan, Savaş
dc.contributor.iztechauthorÖzyüzer, Lütfi
dc.contributor.iztechauthorEğilmez, Mehmet
dc.relation.journalJournal of Optoelectronics and Advanced Materialsen_US
dc.contributor.departmentIzmir Institute of Technology. Physicsen_US
dc.identifier.volume7en_US
dc.identifier.issue1en_US
dc.identifier.startpage297en_US
dc.identifier.endpage300en_US
dc.identifier.wosWOS:000228522700045
dc.identifier.scopusSCOPUS:2-s2.0-15244359472
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US


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