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dc.contributor.authorOkur, Salih
dc.contributor.authorGüneş, Mehmet
dc.contributor.authorGöktaş, Oktay
dc.contributor.authorFinger, Friedhelm
dc.contributor.authorCarius, Reinhard
dc.date.accessioned2016-07-11T10:59:53Z
dc.date.available2016-07-11T10:59:53Z
dc.date.issued2004-03
dc.identifier.citationOkur, S., Güneş, M., Göktaş, O., Finger, F., and Carius, R. (2004). Electronic transport properties of microcrystalline silicon thin films prepared by VHF-PECVD. Journal of Materials Science: Materials in Electronics, 15(3), 187-191. doi:10.1023/B:JMSE.0000011360.00838.c9en_US
dc.identifier.issn0957-4522
dc.identifier.urihttp://doi.org/10.1023/B:JMSE.0000011360.00838.c9
dc.identifier.urihttp://hdl.handle.net/11147/1877
dc.description.abstractSteady-state photocarrier grating (SSPG) and steady-state photoconductivity, σph, experiments have been carried out to investigate the electronic transport properties of undoped hydrogenated microcrystalline silicon (μc-Si: H) films prepared with very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD). Material with different crystalline volume fractions was obtained by variation of the silane concentration (SC) in the process gas mixture. Pure amorphous silicon material was investigated for comparison. The ambipolar diffusion length, L amb, which is dominated by the minority carrier properties, is obtained both from the best fit to the experimental photocurrents ratio, β, versus grating period (Λ), and from the "Balberg plot" for the generation rates between 1019 and 1021 cm -3 s-1. Lamb increases from 86 nm with increasing SC and peaks around 200 nm for the SC = 5.6% and decreases again for higher SCs. Lamb values obtained from the intercept of the Balberg plot result in a small difference of around 5% for most of the samples. Minority carrier mobility-lifetime (μτ)-products are much lower than those of majority carriers, however, both majority and minority carrier μτ-products in microcrystalline silicon are higher than those of undoped hydrogenated amorphous silicon. The grating quality factor (γ 0) changes from 0.70 to 1.0 indicating almost negligible surface roughness present in the samples.en_US
dc.description.sponsorshipTÜBİTAKen_US
dc.language.isoengen_US
dc.publisherKluwer Academic Publishersen_US
dc.relation.isversionof10.1023/B:JMSE.0000011360.00838.c9en_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectThin filmsen_US
dc.subjectCarrier transport propertiesen_US
dc.subjectPlasma excitation frequencyen_US
dc.subjectSteady-state photocarrier gratingen_US
dc.subjectLaser beamsen_US
dc.subjectHydrogenationen_US
dc.titleElectronic transport properties of microcrystalline silicon thin films prepared by VHF-PECVDen_US
dc.typearticleen_US
dc.contributor.authorIDTR12208en_US
dc.contributor.authorIDTR1299en_US
dc.contributor.institutionauthorOkur, Salih
dc.contributor.institutionauthorGüneş, Mehmet
dc.contributor.institutionauthorGöktaş, Oktay
dc.relation.journalJournal of Materials Science: Materials in Electronicsen_US
dc.contributor.departmentIzmir Institute of Technology. Physicsen_US
dc.identifier.volume15en_US
dc.identifier.issue3en_US
dc.identifier.startpage187en_US
dc.identifier.endpage191en_US
dc.identifier.wosWOS:000187939000011
dc.identifier.scopusSCOPUS:2-s2.0-0742268078
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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