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dc.contributor.authorGüneş, Mehmet
dc.date.accessioned2021-02-12T18:52:49Z
dc.date.available2021-02-12T18:52:49Z
dc.date.issued1997
dc.identifier.isbn0-7923-4667-X
dc.identifier.urihttps://hdl.handle.net/11147/10789
dc.descriptionNATO Advanced Research Workshop on Diamond Based Compositesen_US
dc.description.abstractIn this study, wide band gap a-Si1-x C-x:H alloy thin films prepared with and without hydrogen diluation of (SiH4, CH4) were characterized using optical absorption, dark conductivity, steady-state photoconductivity, sub-bandgap absorption obtained with both photothermal deflection spectroscopy (PDS) and dual beam photoconductivity (DBP), and electron spin resonance (ESR) techniques. Experimental results of steady-state photoconductivity and sub-bandgap absorption for different generation rates were analyzed using a detailed numerical model based on Simmons-Taylor statistics. The densities, energy location and nature of the native and light induced defect states in diluted and undiluted a-Si1-xCx:H alloy thin films were derived from the best fits to the experimental data. The extracted parameters for defect states were compared with those of a-Si:H films both in the annealed and light degraded states.en_US
dc.language.isoengen_US
dc.publisherSpringeren_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.titleNative and light induced defect states in wide band gap hydrogenated amorphous silicon-carbon (a-Si1-xCx : H) alloy thin filmsen_US
dc.typeconferenceObjecten_US
dc.contributor.institutionauthorGüneş, Mehmet
dc.relation.journalDiamond Based Composites and Related Materialsen_US
dc.contributor.departmentIzmir Institute of Technology. Physicsen_US
dc.identifier.volume38en_US
dc.identifier.startpage285en_US
dc.identifier.endpage299en_US
dc.identifier.wosWOS:000072298200024
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US


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