Now showing items 1-3 of 3
Developing epitaxial graphene electrodes for silicon carbide based optoelectronic devices
(Izmir Institute of Technology, 2015-12)
In this thesis work, I studied the fabrication and characterization of graphene-semiconductor-graphene ultraviolet photodetector based on the rectifying character of Schottky junction at the interface between epitaxial ...
Layer- and strain-dependent optoelectronic properties of hexagonal AlN
(American Physical Society, 2015-10)
Motivated by the recent synthesis of layered hexagonal aluminum nitride (h-AlN), we investigate its layer- and strain-dependent electronic and optical properties by using first-principles methods. Monolayer h-AlN is a ...
Graphene-quantum dot hybrid optoelectronics at visible wavelengths
(American Chemical Society, 2018-06)
With exceptional electronic and gate-tunable optical properties, graphene provides new possibilities for active nanophotonic devices. Requirements of very large carrier density modulation, however, limit the operation of ...