Now showing items 1-4 of 4
Influence of buffer layers on Ni thin film structure and graphene growth by CVD
(IOP Publishing, 2015-10)
Buffer and/or adhesive layers were used to decrease the dewetting of Ni thin film at graphene growth temperatures of around 900 °C. Depositing a thin buffer (Al2O3) layer onto SiO2/Si substrate significantly reduced the ...
Nitrogen doping for facile and effective modification of graphene surfaces
(Royal Society of Chemistry, 2017)
We report experimental and theoretical investigations of nitrogen doped graphene. A low-pressure Chemical Vapor Deposition (CVD) system was used to grow large-area graphene on copper foil, using ethylene as the carbon ...
Experimental and computational investigation of graphene/SAMs/n-Si Schottky diodes
We have investigated the effect of two different self-assembled monolayers (SAMs) on electrical characteristics of bilayer graphene (BLG)/n-Si Schottky diodes. Novel 4″bis(diphenylamino)-1, 1′:3″-terphenyl-5′ carboxylic ...
Effect of aromatic SAMs molecules on graphene/silicon schottky diode performance
(Electrochemical Society, 2016)
Au/n-Si/Graphene/Au Schottky diodes were fabricated by transferring atmospheric pressure chemical vapor deposited (APCVD) graphene on silicon substrates. Graphene/n-Si interface properties were improved by using ...