Browsing by Subject "Cadmium telluride"
Now showing items 1-11 of 11
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Characterization of CdTe growth on GaAs using different etching techniques
(Springer, 2015-09-26)CdTe buffer layers which were grown on (211)B GaAs by molecular beam epitaxy were subjected to two different etch treatments to quantify the crystal quality and dislocation density. The optical properties and thicknesses ... -
Characterization of lattice mismatch induced dislocations on epitaxial CdTe films
(Izmir Institute of Technology, 2015-07)Mercury Cadmium Telluride (HgCdTe) is a widely used material for infrared focal plane array applications. In order to produce high quality infrared detecting material, HgCdTe needs to be grown on large area alternative ... -
Effect of annealing on the density of defects in epitaxial CdTe (211)/GaAs
(Springer, 2018-08)CdTe thin films were grown on GaAs (211) wafers by molecular beam epitaxy as the buffer layer for HgCdTe infrared detector applications. We studied the effect of annealing on the density of dislocation of these CdTe thin ... -
Erratum to: MBE-grown CdTe layers on GaAs with in-assisted thermal deoxidation
(Springer, 2016-11) -
Growth and characterization of CdTe absorbers on GaAs by MBE for high concentration PV solar cells
(Wiley, 2015-11)CdTe based II-VI absorbers are promising candidates for high concentration PV solar cells with an ideal band gap for AM1.5 solar radiation. In this study, we propose single crystal CdTe absorbers grown on GaAs substrates ... -
Identifying threading dislocations in CdTe films by reciprocal space mapping and defect decoration etching
(American Institute of Physics, 2018-08)We study threading dislocation (TD) density of high-quality cadmium telluride (CdTe) layers grown on a (211) oriented GaAs substrate by molecular beam epitaxy. High-resolution X-ray diffraction was performed to calculate ... -
MBE-grown CdTe layers on GaAs with in-assisted thermal deoxidation
(Springer, 2016-10-01)Molecular beam epitaxy (MBE) growth of thin (∼2 μm) CdTe layers characterized by high crystal quality and low defect density on lattice mismatched substrates, such as GaAs and Si, has thus far been difficult to achieve. ... -
Molecular beam epitaxial growth of ZnSe on (211)B GaAs
(Izmir Institute of Technology, 2017-06)The Mercury Cadmium Telluride (Hg1-xCdxTe) play important role for infrared (IR) focal plane array application. It is grown on variety alternative substrates which are Si, Ge, GaAs or GaSb. When GaAs is compared with the ... -
Simultaneous identification of spectral properties and sizes of multiple particles in solution with subnanometer resolution
(Wiley, 2016)We report an unsurpassed solution characterization technique based on analytical ultracentrifugation, which demonstrates exceptional potential for resolving particle sizes in solution with sub-nm resolution. We achieve ... -
Stable monolayer α-phase of CdTe: Strain-dependent properties
(Royal Society of Chemistry, 2017)CdTe is a well known and widely used binary compound for optoelectronic applications. In this study, we propose the thinnest, free standing monolayer of CdTe which has a tetragonal-PbO (α-PbO) symmetry. The structural, ... -
Surface roughness estimation of MBE grown CdTe/GaAs(211)B by ex-situ spectroscopic ellipsometry
(American Institute of Physics Publishing, 2016-07-01)Spectroscopic ellipsometry (SE) ranging from 1.24 eV to 5.05 eV is used to obtain the film thickness and optical properties of high index (211) CdTe films. A three-layer optical model (oxide/CdTe/GaAs) was chosen for the ...
