Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/8891
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dc.contributor.authorEren, İsmail-
dc.contributor.authorÖzen, Sercan-
dc.contributor.authorSözen, Yiğit-
dc.contributor.authorYağmurcukardeş, Mehmet-
dc.contributor.authorŞahin, Hasan-
dc.date.accessioned2020-07-18T08:34:06Z-
dc.date.available2020-07-18T08:34:06Z-
dc.date.issued2019-
dc.identifier.issn1932-7447-
dc.identifier.issn1932-7455-
dc.identifier.urihttps://doi.org/10.1021/acs.jpcc.9b06404-
dc.identifier.urihttps://hdl.handle.net/11147/8891-
dc.description.abstractWe present a first-principles investigation on the stability, electronic structure, and mechanical response of ultrathin heterostructures composed of single layers of InSe and SiGe. First, by performing total energy optimization and phonon calculations, we show that single layers of InSe and SiGe can form dynamically stable heterostructures in 12 different stacking types. Valence and conduction band edges of the heterobilayers form a type-I heterojunction having a tiny band gap ranging between 0.09 and 0.48 eV. Calculations on elastic-stiffness tensor reveal that two mechanically soft single layers form a heterostructure which is stiffer than the constituent layers because of relatively strong interlayer interaction. Moreover, phonon analysis shows that the bilayer heterostructure has highly Raman active modes at 205.3 and 43.7 cm(-1), stemming from the out-of-plane interlayer mode and layer breathing mode, respectively. Our results show that, as a stable type-I heterojunction, ultrathin heterobilayer of InSe/SiGe holds promise for nanoscale device applications.en_US
dc.language.isoenen_US
dc.publisherAmerican Chemical Societyen_US
dc.relation.ispartofJournal of Physical Chemistry Cen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.titleVertical van der waals heterostructure of single layer InSe and SiGeen_US
dc.typeArticleen_US
dc.institutionauthorEren, İsmail-
dc.institutionauthorÖzen, Sercan-
dc.institutionauthorSözen, Yiğit-
dc.institutionauthorŞahin, Hasan-
dc.departmentİzmir Institute of Technology. Physicsen_US
dc.departmentİzmir Institute of Technology. Photonicsen_US
dc.identifier.volume123en_US
dc.identifier.issue51en_US
dc.identifier.startpage31232en_US
dc.identifier.endpage31237en_US
dc.identifier.wosWOS:000505632900050en_US
dc.identifier.scopus2-s2.0-85077195089en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.doi10.1021/acs.jpcc.9b06404-
dc.relation.doi10.1021/acs.jpcc.9b06404en_US
dc.coverage.doi10.1021/acs.jpcc.9b06404en_US
local.message.claim2022-06-09T15:23:39.467+0300|||rp00609|||submit_approve|||dc_contributor_author|||None*
dc.identifier.wosqualityQ2-
dc.identifier.scopusqualityQ1-
item.fulltextWith Fulltext-
item.cerifentitytypePublications-
item.openairetypeArticle-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.grantfulltextopen-
item.languageiso639-1en-
crisitem.author.dept04.05. Department of Pyhsics-
crisitem.author.dept01. Izmir Institute of Technology-
crisitem.author.dept04.04. Department of Photonics-
crisitem.author.dept04.04. Department of Photonics-
Appears in Collections:Photonics / Fotonik
Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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