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dc.contributor.authorÇetinel, A.
dc.contributor.authorArtunç, N.
dc.contributor.authorŞahin, G.
dc.contributor.authorTarhan, Enver
dc.date.accessioned2017-05-18T07:37:08Z
dc.date.available2017-05-18T07:37:08Z
dc.date.issued2015-06
dc.identifier.citationÇetinel, A., Artunç, N., Şahin, G., and Tarhan, E. (2015). Influence of applied current density on the nanostructural and light emitting properties of n-type porous silicon. International Journal of Modern Physics B, 29(15). doi:10.1142/S0217979215500939en_US
dc.identifier.issn0217-9792
dc.identifier.urihttp://doi.org/10.1142/S0217979215500939
dc.identifier.urihttp://hdl.handle.net/11147/5549
dc.description.abstractEffects of current density on nanostructure and light emitting properties of porous silicon (PS) samples were investigated by field emission scanning electron microscope (FE-SEM), gravimetric method, Raman and photoluminescence (PL) spectroscopy. FE-SEM images have shown that below 60 mA/cm2, macropore and mesopore arrays, exhibiting rough morphology, are formed together, whose pore diameter, pore depth and porosity are about 265-760 nm, 58-63 μ m and 44-61%, respectively. However, PS samples prepared above 60 mA/cm2 display smooth and straight macropore arrays, with pore diameter ranging from 900-1250 nm, porosity of 61-80% and pore depth between 63-69 μm. Raman analyses have shown that when the current density is increased from 10 mA/cm2 to 100 mA/cm2, Raman peaks of PS samples shift to lower wavenumbers by comparison to crystalline silicon (c-Si). The highest Raman peak shift is found to be 3.2 cm-1 for PS sample, prepared at 90 mA/cm2, which has the smallest nanocrystallite size, about 5.2 nm. This sample also shows a pronounced PL, with the highest blue shifting, of about 12 nm. Nanocrystalline silicon, with the smallest nanocrystallite size, confirmed by our Raman analyses using microcrystal model (MCM), should be responsible for both the highest Raman peak shift and PL blue shift due to quantum confinement effect (QCE).en_US
dc.description.sponsorshipEge University, Research Project Foundation (2013FEN058)en_US
dc.language.isoengen_US
dc.publisherWorld Scientific Publishingen_US
dc.relation.isversionof10.1142/S0217979215500939en_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectMicrocrystal modelen_US
dc.subjectNanostructuresen_US
dc.subjectPhonon confinementen_US
dc.subjectPorous siliconen_US
dc.subjectRaman scatteringen_US
dc.titleInfluence of applied current density on the nanostructural and light emitting properties of n-type porous siliconen_US
dc.typearticleen_US
dc.contributor.authorIDTR130905en_US
dc.contributor.institutionauthorŞahin, G.
dc.contributor.institutionauthorTarhan, Enver
dc.relation.journalInternational Journal of Modern Physics Ben_US
dc.contributor.departmentİYTE, Fen Fakültesi, Fizik Bölümüen_US
dc.identifier.volume29en_US
dc.identifier.issue15en_US
dc.identifier.wosWOS:000355326700002
dc.identifier.scopusSCOPUS:2-s2.0-84929945133
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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