Now showing items 1-4 of 4
Growth and characterization of CdTe absorbers on GaAs by MBE for high concentration PV solar cells
CdTe based II-VI absorbers are promising candidates for high concentration PV solar cells with an ideal band gap for AM1.5 solar radiation. In this study, we propose single crystal CdTe absorbers grown on GaAs substrates ...
MBE-grown CdTe layers on GaAs with in-assisted thermal deoxidation
Molecular beam epitaxy (MBE) growth of thin (∼2 μm) CdTe layers characterized by high crystal quality and low defect density on lattice mismatched substrates, such as GaAs and Si, has thus far been difficult to achieve. ...
Surface roughness estimation of MBE grown CdTe/GaAs(211)B by ex-situ spectroscopic ellipsometry
(American Institute of Physics Publishing, 2016-07-01)
Spectroscopic ellipsometry (SE) ranging from 1.24 eV to 5.05 eV is used to obtain the film thickness and optical properties of high index (211) CdTe films. A three-layer optical model (oxide/CdTe/GaAs) was chosen for the ...
Erratum to: MBE-grown CdTe layers on GaAs with in-assisted thermal deoxidation