Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/4535
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dc.contributor.authorGüneş, Mehmet-
dc.contributor.authorJohanson, Robert E.-
dc.contributor.authorKasap, Safa O.-
dc.date.accessioned2016-04-22T07:25:19Z
dc.date.available2016-04-22T07:25:19Z
dc.date.issued2000-05
dc.identifier.citationGüneş, M., Johanson, R. E., and Kasap, S. O. (2000). Conductance fluctuations in undoped intrinsic hydrogenated amorphous silicon films prepared using several deposition techniques. Journal of Non-Crystalline Solids, 266-269(PART1), 304-308. doi:10.1016/S0022-3093(99)00840-6en_US
dc.identifier.issn0022-3093
dc.identifier.issn0022-3093-
dc.identifier.urihttp://doi.org/10.1016/S0022-3093(99)00840-6
dc.identifier.urihttp://hdl.handle.net/11147/4535
dc.description.abstractCoplanar conductance fluctuations in a range of device quality undoped hydrogenated amorphous silicon (a-Si:H) films prepared using different deposition systems were measured in the temperature range of 440-505 K for frequencies from 2 Hz to 3 kHz. The 1/fa type noise spectra had two different power law dependencies, one at lower frequencies with slope α1 close to unity and a second region at higher frequencies with slope α2 around 0.60. The noise power density decreases with increasing temperature in the high frequency region, but only increases much less with temperature at low frequencies. The results indicate that the noise in undoped intrinsic a-Si:H films is due to two independent noise mechanisms operating simultaneouslyen_US
dc.language.isoenen_US
dc.publisherElsevier Ltd.en_US
dc.relation.ispartofJournal of Non-Crystalline Solidsen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectSiliconen_US
dc.subjectAmorphous semiconductorsen_US
dc.subjectSemiconductor filmsen_US
dc.subjectThin film devicesen_US
dc.titleConductance fluctuations in undoped intrinsic hydrogenated amorphous silicon films prepared using several deposition techniquesen_US
dc.typeArticleen_US
dc.authoridTR1299en_US
dc.institutionauthorGüneş, Mehmet-
dc.departmentIzmir Institute of Technology. Physicsen_US
dc.identifier.volume266-269en_US
dc.identifier.issuePART 1en_US
dc.identifier.startpage304en_US
dc.identifier.endpage308en_US
dc.identifier.wosWOS:000087189800057en_US
dc.identifier.scopus2-s2.0-0242284324en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.doi10.1016/S0022-3093(99)00840-6-
dc.relation.doi10.1016/S0022-3093(99)00840-6en_US
dc.coverage.doi10.1016/S0022-3093(99)00840-6en_US
local.message.claim2022-06-16T11:18:52.542+0300|||rp01576|||submit_approve|||dc_contributor_author|||None*
dc.identifier.scopusqualityQ1-
item.openairetypeArticle-
item.languageiso639-1en-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.grantfulltextopen-
item.fulltextWith Fulltext-
item.cerifentitytypePublications-
crisitem.author.dept04.05. Department of Pyhsics-
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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