Now showing items 1-1 of 1
Properties of reactive O2 ion beam sputtered TiO2 on Si wafers
(National Institute of Optoelectronics, 2005-02)
TiO2 thin films were deposited on silicon (100) p-type wafers, using the reactive ion beam sputtering method in high vacuum as an alternative to conventional Argon ion beam sputtering in an O2 environment. Oxygen ions with ...