Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/2786
Title: High quality ITO thin films grown by dc and RF sputtering without oxygen
Authors: Tuna, Öcal
Selamet, Yusuf
Özyüzer, Gülnur Aygün
Özyüzer, Lütfi
Tuna, Öcal
Selamet, Yusuf
Özyüzer, Gülnur Aygün
Özyüzer, Lütfi
Izmir Institute of Technology. Physics
Keywords: Optical films
Band gaps
Crystallization orientation
Indium tin oxide thin films
Titanium compounds
Optical transmissions
Issue Date: 2010
Publisher: IOP Publishing Ltd.
Source: Tuna, Ö., Selamet, Y., Aygün, G., and Özyüzer, L. (2010). High quality ITO thin films grown by dc and RF sputtering without oxygen. Journal of Physics D: Applied Physics, 43(5). doi:10.1088/0022-3727/43/5/055402
Abstract: High quality indium tin oxide (ITO) thin films were grown without oxygen by both dc and RF magnetron sputtering techniques on glass substrates. The effects of substrate temperature, film thickness and sputtering method on the structural, electrical and optical properties of the as-grown films were investigated. The results showed that the substrate temperature had substantial effects on the film properties, in particular on the crystallization and resistivity. When the substrate temperature was increased to 150 °C, crystallization in the (2 2 2) plane started appearing for both dc and RF sputtered films. We additionally found that with further increments of substrate temperature, the preferred crystallization orientation changed differently for dc and RF sputtered films. Optical transmission in the visible region for a film thickness of 70 nm was found to be above 85%. The bandgap was calculated to be about 3.64 eV for the substrate temperature of 150 °C for a 70 nm thick film. The value of the bandgap increased with respect to the increment in film thickness as well as substrate temperature. We also measured the temperature dependence of the resistivity and Hall coefficient of the films, and calculated the carrier concentration and Hall mobility. Very low room temperature resistivities for dc and RF magnetron sputtered grown films of about 1.28 × 10-4 Ω cm and 1.29 × 10-4 Ω cm, respectively, were obtained. © 2010 IOP Publishing Ltd.
URI: http://doi.org/10.1088/0022-3727/43/5/055402
http://hdl.handle.net/11147/2786
ISSN: 0022-3727
0022-3727
1361-6463
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

Files in This Item:
File Description SizeFormat 
2786.pdfMakale594.67 kBAdobe PDFThumbnail
View/Open
Show full item record

CORE Recommender

SCOPUSTM   
Citations

184
checked on Sep 25, 2021

WEB OF SCIENCETM
Citations

189
checked on Sep 25, 2021

Page view(s)

18
checked on Sep 25, 2021

Download(s)

52
checked on Sep 25, 2021

Google ScholarTM

Check

Altmetric


Items in GCRIS Repository are protected by copyright, with all rights reserved, unless otherwise indicated.