dc.contributor.author | Okur, Salih | |
dc.contributor.author | Güneş, Mehmet | |
dc.contributor.author | Finger, Friedhelm | |
dc.contributor.author | Carius, Reinhard | |
dc.date.accessioned | 2016-10-12T11:32:39Z | |
dc.date.available | 2016-10-12T11:32:39Z | |
dc.date.issued | 2006-04 | |
dc.identifier.citation | Okur, S., Güneş, M., Finger, F., and Carius, R. (2006). Diffusion length measurements of microcrystalline silicon thin films prepared by hot-wire/catalytic chemical vapor deposition (HWCVD). Thin Solid Films, 501(1-2), 137-140. doi:10.1016/j.tsf.2005.07.141 | en_US |
dc.identifier.issn | 0040-6090 | |
dc.identifier.uri | http://doi.org/10.1016/j.tsf.2005.07.141 | |
dc.identifier.uri | http://hdl.handle.net/11147/2220 | |
dc.description | Proceedings of the Third International Conference on Hot-Wire; 23 August 2004 through 27 August 2004 | en_US |
dc.description.abstract | Hydrogenated microcrystalline silicon (μc-Si:H) films prepared by using the hot-wire/catalytic chemical vapor deposition (HWCVD) technique at low substrate temperatures between 185 °C and 220 °C with different silane concentrations (SC) were investigated using steady-state photocarrier grating (SSPG) and the steady-state photoconductivity methods (SSPC). Crystalline volume fractions (IC RS) obtained from Raman spectroscopy change from 0.22 to 0.77. The diffusion length (LD) is measured at generation rates between G = 1019 and 1021 cm- 3 s- 1. LD changes from 27 nm to 270 nm, with maximum values around SC = 5%. The dependence of LD on SC is similar to that observed for similar quality microcrystalline silicon films prepared using the VHF-PECVD technique. The grating quality factor, γ0, drops from about 0.9 to 0.5 after transition to the microcrystalline regime as indication of scattering from surface patterns. | en_US |
dc.description.sponsorship | TÜBİTAK project number TBAG-U/14 (101T016) | en_US |
dc.language.iso | eng | en_US |
dc.publisher | Elsevier | en_US |
dc.relation.isversionof | 10.1016/j.tsf.2005.07.141 | en_US |
dc.rights | info:eu-repo/semantics/openAccess | en_US |
dc.subject | Thin films | en_US |
dc.subject | Diffusion length | en_US |
dc.subject | Hot-wire/catalytic chemical vapor deposition | en_US |
dc.subject | Raman spectroscopy | en_US |
dc.title | Diffusion length measurements of microcrystalline silicon thin films prepared by hot-wire/catalytic chemical vapor deposition (HWCVD) | en_US |
dc.type | conferenceObject | en_US |
dc.contributor.authorID | TR1299 | en_US |
dc.contributor.iztechauthor | Okur, Salih | |
dc.contributor.iztechauthor | Güneş, Mehmet | |
dc.relation.journal | Thin Solid Films | en_US |
dc.contributor.department | Izmir Institute of Technology. Physics | en_US |
dc.identifier.volume | 501 | en_US |
dc.identifier.issue | 1-2 | en_US |
dc.identifier.startpage | 137 | en_US |
dc.identifier.endpage | 140 | en_US |
dc.identifier.wos | WOS:000235979600033 | |
dc.identifier.scopus | SCOPUS:2-s2.0-32644467416 | |
dc.relation.publicationcategory | Konferans Öğesi - Uluslararası - Kurum Öğretim Elemanı | en_US |