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dc.contributor.authorOkur, Salih
dc.contributor.authorGüneş, Mehmet
dc.contributor.authorFinger, Friedhelm
dc.contributor.authorCarius, Reinhard
dc.date.accessioned2016-10-12T11:32:39Z
dc.date.available2016-10-12T11:32:39Z
dc.date.issued2006-04
dc.identifier.citationOkur, S., Güneş, M., Finger, F., and Carius, R. (2006). Diffusion length measurements of microcrystalline silicon thin films prepared by hot-wire/catalytic chemical vapor deposition (HWCVD). Thin Solid Films, 501(1-2), 137-140. doi:10.1016/j.tsf.2005.07.141en_US
dc.identifier.issn0040-6090
dc.identifier.urihttp://doi.org/10.1016/j.tsf.2005.07.141
dc.identifier.urihttp://hdl.handle.net/11147/2220
dc.descriptionProceedings of the Third International Conference on Hot-Wire; 23 August 2004 through 27 August 2004en_US
dc.description.abstractHydrogenated microcrystalline silicon (μc-Si:H) films prepared by using the hot-wire/catalytic chemical vapor deposition (HWCVD) technique at low substrate temperatures between 185 °C and 220 °C with different silane concentrations (SC) were investigated using steady-state photocarrier grating (SSPG) and the steady-state photoconductivity methods (SSPC). Crystalline volume fractions (IC RS) obtained from Raman spectroscopy change from 0.22 to 0.77. The diffusion length (LD) is measured at generation rates between G = 1019 and 1021 cm- 3 s- 1. LD changes from 27 nm to 270 nm, with maximum values around SC = 5%. The dependence of LD on SC is similar to that observed for similar quality microcrystalline silicon films prepared using the VHF-PECVD technique. The grating quality factor, γ0, drops from about 0.9 to 0.5 after transition to the microcrystalline regime as indication of scattering from surface patterns.en_US
dc.description.sponsorshipTÜBİTAK project number TBAG-U/14 (101T016)en_US
dc.language.isoengen_US
dc.publisherElsevieren_US
dc.relation.isversionof10.1016/j.tsf.2005.07.141en_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectThin filmsen_US
dc.subjectDiffusion lengthen_US
dc.subjectHot-wire/catalytic chemical vapor depositionen_US
dc.subjectRaman spectroscopyen_US
dc.titleDiffusion length measurements of microcrystalline silicon thin films prepared by hot-wire/catalytic chemical vapor deposition (HWCVD)en_US
dc.typeconferenceObjecten_US
dc.contributor.authorIDTR1299en_US
dc.contributor.iztechauthorOkur, Salih
dc.contributor.iztechauthorGüneş, Mehmet
dc.relation.journalThin Solid Filmsen_US
dc.contributor.departmentIzmir Institute of Technology. Physicsen_US
dc.identifier.volume501en_US
dc.identifier.issue1-2en_US
dc.identifier.startpage137en_US
dc.identifier.endpage140en_US
dc.identifier.wosWOS:000235979600033
dc.identifier.scopusSCOPUS:2-s2.0-32644467416
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US


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