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dc.contributor.authorKim, Hyunjung
dc.contributor.authorTarhan, Enver
dc.contributor.authorChen, G.
dc.contributor.authorRamdas, A. K.
dc.contributor.authorSciacca, M. D.
dc.contributor.authorGunshor, R. L.
dc.date.accessioned2016-10-07T12:53:43Z
dc.date.available2016-10-07T12:53:43Z
dc.date.issued2006-09
dc.identifier.citationKim, H., Tarhan, E., Chen, G., Ramdas, A. K., Sciacca, M. D., and Gunshor, R. L. (2006). Origin of a localized vibrational mode in a GaSb substrate with a MBE-grown ZnTe epilayer. Semiconductor Science and Technology, 21(9), 1224-1228. doi:10.1088/0268-1242/21/9/003en_US
dc.identifier.issn0268-1242
dc.identifier.urihttp://doi.org/10.1088/0268-1242/21/9/003
dc.identifier.urihttp://hdl.handle.net/11147/2189
dc.description.abstractA localized vibrational mode (LVM) with a remarkable fine structure is observed in the infrared transmission spectrum of a ZnTe epilayer grown with molecular beam epitaxy (MBE) on a GaSb substrate. On the basis of the Zn and Te deposited on the GaSb substrate during the MBE growth of ZnTe, and assuming diffusion of Zn and Te into GaSb, the LVM is attributed to Zn, substitutionally replacing either the cation, Ga (ZnGa), or the anion, Sb (Zn Sb). The frequency of the LVM and its fine structure can then be interpreted in terms of the infrared active modes of 64Zn substituting for Sb as an anti-site impurity and treating the centre as an XY4 quasimolecule. With X≡64Zn and Y≡ 69Ga and 71Ga, occupying the nearest-neighbour sites reflecting all the possible combinations and permutations as well as the natural isotopic abundance of Ga, the fine structure of the LVM can be accounted for quantitatively.en_US
dc.description.sponsorshipInternational Cooperation Research Program of Korean Ministry of Science and Technology (M6-0403-0079); 2003 Special Research Fund from Sogang University and US National Science Foundation (DMR0405082)en_US
dc.language.isoengen_US
dc.publisherIOP Publishingen_US
dc.relation.isversionof10.1088/0268-1242/21/9/003en_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectGallium compoundsen_US
dc.subjectAntimony compoundsen_US
dc.subjectCrystal structureen_US
dc.subjectMolecular beam epitaxyen_US
dc.titleOrigin of a localized vibrational mode in a GaSb substrate with a MBE-grown ZnTe epilayeren_US
dc.typearticleen_US
dc.contributor.authorIDTR130905en_US
dc.contributor.institutionauthorTarhan, Enver
dc.relation.journalSemiconductor Science and Technologyen_US
dc.contributor.departmentIzmir Institute of Technology. Physicsen_US
dc.identifier.volume21en_US
dc.identifier.issue9en_US
dc.identifier.startpage1224en_US
dc.identifier.endpage1228en_US
dc.identifier.wosWOS:000240123200004
dc.identifier.scopusSCOPUS:2-s2.0-33747281793
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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