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Browsing by Author "Kasap, Safa O."
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1/f noise in amorphous silicon and silicon-germanium alloys
Johanson, Robert E.; Güneş, Mehmet; Kasap, Safa O. (SPIE, 2003)We report measurements of conductance noise of a-Si1-XGeX:H in two different geometries; one where the current flow is transverse to the surface and the other longitudinal to it. Because of the large increase in sample ... -
1/f Noise in doped and undoped amorphous silicon
Johanson, Robert E.; Güneş, Mehmet; Kasap, Safa O. (Elsevier, 2000-05)We measured the spectrum of conductance fluctuations in n-type, p-type, and undoped hydrogenated amorphous silicon (a-Si:H) as a function of temperature. In general, the spectra can be fit to a power law, 1/fα, although ... -
1/f noise in hydrogenated amorphous silicon-germanium alloys
Johanson, Robert E.; Güneş, Mehmet; Kasap, Safa O. (Institute of Electrical Engineers, 2003-08)Measurements were made of conductance noise of a-Si:H and a-Si 1-xGex:H in two different geometries: one where the current flow is transverse to the surface and the other where it is longitudinal to the surface. Because ... -
1/f-noise study of undoped intrinsic hydrogenated amorphous silicon thin films
Güneş, Mehmet; Johanson, Robert E.; Kasap, Safa O. (American Physical Society, 1999)Conductance fluctuations in four samples of undoped intrinsic hydrogenated amorphous silicon (a-Si:H) were measured in the temperature range of 450 K to 500 K and for frequencies from 2 Hz to 3 kHz. The noise spectra divide ... -
Conductance fluctuations in a-Si:H: Effects of alloying and device structure
Kasap, Safa O.; Güneş, Mehmet; Johanson, Robert E.; Wang, Q.; Yang, Jeffrey; Guha, Subhendu (Kluwer Academic Publishers, 2003-10)We present measurements of conductance noise in undoped a-Si:H and a-SiGe: H thin films in both a transverse and coplanar electrode geometry. For a-Si:H with coplanar electrodes, the noise spectrum is not a pure f-α power ... -
Conductance fluctuations in undoped hydrogenated amorphous silicon-germanium alloy thin films
Güneş, Mehmet; Johanson, Robert E.; Kasap, Safa O.; Yang, Jeffrey C.; Guha, Subhendu (Elsevier, 2002-04)We report coplanar conductance fluctuations of device quality, undoped hydrogenated amorphous silicon-germanium alloy thin films (a-SiGe:H) measured from 430 to 490 K. The a-SiGe:H alloys produce noise power spectra similar ... -
Conductance fluctuations in undoped intrinsic hydrogenated amorphous silicon films prepared using several deposition techniques
Güneş, Mehmet; Johanson, Robert E.; Kasap, Safa O. (Elsevier, 2000-05)Coplanar conductance fluctuations in a range of device quality undoped hydrogenated amorphous silicon (a-Si:H) films prepared using different deposition systems were measured in the temperature range of 440-505 K for ... -
Conductance fluctuations in VHF-PECVD grown hydrogenated microcrystalline silicon thin films
Güneş, Mehmet; Johanson, Robert E.; Kasap, Safa O.; Finger, Friedhelm; Lambertz, Andreas (Kluwer Academic Publishers, 2003-10)Coplanar conductance fluctuations or excess noise of undoped hydrogenated microcrystal-line silicon (μc-Si : H) thin films grown by VHF-PECVD from silane-hydrogen mixtures with silane concentrations from 2% to 6% have been ...
