Showing results 5 to 24 of 29
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| Issue Date | Title | Author(s) |
| 2005 | Capacitance-voltage spectroscopy in metal-tantalum pentoxide (Ta-O)-silicon mos capacitors | Özdağ, Pınar |
| Oct-2003 | Conductance fluctuations in a-Si:H: Effects of alloying and device structure | Kasap, Safa O.; Güneş, Mehmet ; Johanson, Robert E.; Wang, Q.; Yang, Jeffrey; Guha, Subhendu |
| Apr-2002 | Conductance fluctuations in undoped hydrogenated amorphous silicon-germanium alloy thin films | Güneş, Mehmet ; Johanson, Robert E.; Kasap, Safa O.; Yang, Jeffrey C.; Guha, Subhendu |
| May-2000 | Conductance fluctuations in undoped intrinsic hydrogenated amorphous silicon films prepared using several deposition techniques | Güneş, Mehmet ; Johanson, Robert E.; Kasap, Safa O. |
| Oct-2003 | Conductance fluctuations in VHF-PECVD grown hydrogenated microcrystalline silicon thin films | Güneş, Mehmet ; Johanson, Robert E.; Kasap, Safa O.; Finger, Friedhelm; Lambertz, Andreas |
| Apr-1997 | Differences in the densities of charged defect states and kinetics of Staebler-Wronski effect in undoped (nonintrinsic) hydrogenated amorphous silicon thin films | Güneş, Mehmet ; Wronski, Christopher R. |
| Apr-2006 | Diffusion length measurements of microcrystalline silicon thin films prepared by hot-wire/catalytic chemical vapor deposition (HWCVD) | Okur, Salih ; Güneş, Mehmet ; Finger, Friedhelm; Carius, Reinhard |
| 2005 | The effects of deposition conditions on the low energy absorption spectrum of microcrystalline silicon thin films prepared by HWCVD method | Işık, Nebile |
| 2005 | The effects of native and light induced defects in the optical and electronic properties of hydrogenated amorphous silicon germanium (a-SiGe:H) alloy thin films | Dönertaş Yavaş, Medine Elif |
| Feb-2010 | The effects of native and light induced defects on optoelectronic properties of hydrogenated amorphous silicon-germanium (a-SiGe:H) alloy thin films | Güneş, Mehmet ; Yavaş, Mert; Klomfaß, Josef; Finger, Friedhelm |
| Feb-2005 | The effects of oxide thickness on the interface and oxide properties of metal-tantalum pentoxide-Si (MOS) capacitors | Özdağ, Pınar; Atanassova, Elena; Güneş, Mehmet |
| 2007 | The effects of prior nitridation process of silicon surface and different metal gates on the Capacitance Voltage Characteristics of metal-Ta2O5-Si MOS capacitor | Özben, Eylem Durğun |
| Mar-2004 | Electronic transport properties of microcrystalline silicon thin films prepared by VHF-PECVD | Okur, Salih ; Güneş, Mehmet ; Göktaş, Oktay; Finger, Friedhelm; Carius, Reinhard |
| Feb-2005 | Instability phenomena in microcrystalline silicon films | Finger, Friedhelm; Carius, Reinhard; Dylla, Thorsten; Klein, Stefan; Okur, Salih ; Güneş, Mehmet |
| Feb-2005 | Light induced degradation of hydrogenated amorphous silicon - Germanium alloy (a-SiGe:H) thin films | Dönertaş, M. Elif; Güneş, Mehmet |
| 2003 | Low temperature photoconductivity of hydrogenated amorphous silicon (a-Si:H) thin flims | Erdoğan, Gökhan |
| Feb-2005 | Minority carrier properties of microcrystalline silicon thin films grown by HW-CVD and VHF-PECVD techniques | Okur, Salih ; Göktaş, Oktay; Güneş, Mehmet ; Finger, Friedhelm; Carius, Reinhard |
| 1997 | Native and light induced defect states in wide band gap hydrogenated amorphous silicon-carbon (a-Si1-xCx : H) alloy thin films | Güneş, Mehmet |
| 2002 | Noise in hydrogenated amorphous silicon | Johanson, Robert E.; Güneş, Mehmet ; Kasap, Safa O. |
| Oct-2003 | Photoconductivity spectroscopy in hydrogenated microcrystalline silicon thin films | Güneş, Mehmet ; Akdaş, Deniz; Göktaş, Oktay; Carius, Reinhard; Klomfaß, Josef; Finger, Friedhelm |
