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dc.contributor.authorYüce, Hürriyet
dc.contributor.authorAlaboz, Hakan
dc.contributor.authorDemirhan, Yasemin
dc.contributor.authorÖzdemir, M.
dc.contributor.authorÖzyüzer, Lütfi
dc.contributor.authorAygün, Gülnur
dc.date.accessioned2018-01-24T11:42:08Z
dc.date.available2018-01-24T11:42:08Z
dc.date.issued2017-10
dc.identifier.citationYüce, H., Alaboz, H., Demirhan, Y., Özdemir, M., Özyüzer, L., and Aygün, G. (2017). Investigation of electron beam lithography effects on metal-insulator transition behavior of vanadium dioxide. Physica Scripta, 92(11). doi:10.1088/1402-4896/aa90a3en_US
dc.identifier.issn0031-8949
dc.identifier.urihttp://doi.org/10.1088/1402-4896/aa90a3
dc.identifier.urihttp://hdl.handle.net/11147/6736
dc.description.abstractVanadium dioxide (VO2) shows metal-insulator phase transition at nearly 68 °C. This metal-insulator transition (MIT) in VO2 leads to a significant change in near-infrared transmittance and an abrupt change in the resistivity of VO2. Due to these characteristics, VO2 plays an important role on optic and electronic devices, such as thermochromic windows, meta-materials with tunable frequency, uncooled bolometers and switching devices. In this work, VO2 thin films were fabricated by reactive direct current magnetron sputtering in O2/Ar atmosphere on sapphire substrates without any further post annealing processes. The effect of sputtering parameters on optical characteristics and structural properties of grown thin films was investigated by SEM, XRD, Raman and UV/VIS spectrophotometer measurements. Patterning process of VO2 thin films was realized by e-beam lithography technique to monitor the temperature dependent electrical characterization. Electrical properties of VO2 samples were characterized using microprobe station in a vacuum system. MIT with hysteresis behavior was observed for the unpatterned square samples at around 68 °C. By four orders of magnitude of resistivity change was measured for the deposited VO2 thin films at transition temperature. After e-beam lithography process, substantial results in patterned VO2 thin films were observed. In this stage, for patterned VO2 thin films as stripes, the change in resistivity of VO2 was reduced by a factor of 10. As a consequence of electrical resistivity measurements, MIT temperature was shifted from 68 °C to 50 °C. The influence of e-beam process on the properties of VO2 thin films and the mechanism of the effects are discussed. The presented results contribute to the achievement of VO2 based thermochromic windows and bolometer applications.en_US
dc.description.sponsorshipTUBITAK (113F349); University Research Foundation (BAP) 2015-IYTE- 42en_US
dc.language.isoengen_US
dc.publisherIOP Publishingen_US
dc.relationinfo:eu-repo/grantAgreement/TUBITAK/MFAG/113F349en_US
dc.relation.isversionof10.1088/1402-4896/aa90a3en_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectMagnetron sputteringen_US
dc.subjectmetal insulator transitionen_US
dc.subjectVanadium dioxideen_US
dc.titleInvestigation of electron beam lithography effects on metal-insulator transition behavior of vanadium dioxideen_US
dc.typearticleen_US
dc.contributor.authorIDTR5135en_US
dc.contributor.authorIDTR39698en_US
dc.contributor.iztechauthorYüce, Hürriyet
dc.contributor.iztechauthorAlaboz, Hakan
dc.contributor.iztechauthorDemirhan, Yasemin
dc.contributor.iztechauthorÖzdemir, M.
dc.contributor.iztechauthorÖzyüzer, Lütfi
dc.contributor.iztechauthorAygün, Gülnur
dc.relation.journalPhysica Scriptaen_US
dc.contributor.departmentİYTE, Fen Fakültesi, Fizik Bölümüen_US
dc.identifier.volume92en_US
dc.identifier.issue11en_US
dc.identifier.wosWOS:000413746400003
dc.identifier.scopusSCOPUS.2-s2.0-85032905883
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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