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dc.contributor.authorJohanson, Robert E.
dc.contributor.authorGüneş, Mehmet
dc.contributor.authorKasap, Safa O.
dc.date.accessioned2017-11-24T08:35:47Z
dc.date.available2017-11-24T08:35:47Z
dc.date.issued2003
dc.identifier.citationJohanson, R. E., Güneş, M., and Kasap, S. O. (2003, June 1-4). 1/f noise in amorphous silicon and silicon-germanium alloys. Peper presented at the 1st International Symposium on Fluctuations and Noise. doi:10.1117/12.497096en_US
dc.identifier.issn0277-786X
dc.identifier.urihttp://doi.org/10.1117/12.497096
dc.identifier.urihttp://hdl.handle.net/11147/6496
dc.description.abstractWe report measurements of conductance noise of a-Si1-XGeX:H in two different geometries; one where the current flow is transverse to the surface and the other longitudinal to it. Because of the large increase in sample resistance in going from transverse to longitudinal conduction, it was not possible to measure both geometries at the same temperature. However, the temperature trends are compatible with a common noise source. For both geometries, alloying with up to 40% Ge reduces the noise magnitude by a factor of 50 over that found in a-Si:Hen_US
dc.language.isoengen_US
dc.publisherSPIEen_US
dc.relation.isversionof10.1117/12.497096en_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectAmorphous siliconen_US
dc.subjectSilicon germanium alloysen_US
dc.subjectConductance noisesen_US
dc.subject1/f noiseen_US
dc.title1/f noise in amorphous silicon and silicon-germanium alloysen_US
dc.typeconferenceObjecten_US
dc.contributor.iztechauthorGüneş, Mehmet
dc.relation.journal1st International Symposium on Fluctuations and Noiseen_US
dc.contributor.departmentIzmir Institute of Technology. Physicsen_US
dc.identifier.volume5112en_US
dc.identifier.startpage61en_US
dc.identifier.endpage66en_US
dc.identifier.wosWOS:000184179900006
dc.identifier.scopusSCOPUS:2-s2.0-0042764374
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US


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