Now showing items 1-3 of 3
Influence of buffer layers on Ni thin film structure and graphene growth by CVD
(IOP Publishing, 2015-10)
Buffer and/or adhesive layers were used to decrease the dewetting of Ni thin film at graphene growth temperatures of around 900 °C. Depositing a thin buffer (Al2O3) layer onto SiO2/Si substrate significantly reduced the ...
Influence of Ni thin flim structural properties over graphene growth by CVD
(Izmir Institute of Technology, 2013)
This thesis work focused on the effect of polycrystalline Nickel (Ni) TM thin film structure on the growth graphene by chemical vapor deposition (CVD). TM films were deposited by magnetron sputtering technique on Si/SiO2 ...
Self-organized network of silicon oxide on epitaxial graphene
(Izmir Institute of Technology, 2017-05)
In this thesis, I studied the formation and characterization of self-organized hexagonal-shaped SiO2 wrinkle structures on epitaxial graphene that was grown on SiC substrate. Monolayer graphene was grown by annealing the ...