Now showing items 1-3 of 3
Hexagonal AlN: Dimensional-crossover-driven band-gap transition
(American Physical Society, 2015-02-27)
Motivated by a recent experiment that reported the successful synthesis of hexagonal (h) AlN [Tsipas, Appl. Phys. Lett. 103, 251605 (2013)APPLAB0003-695110.1063/1.4851239], we investigate structural, electronic, and ...
Nitrogen doping for facile and effective modification of graphene surfaces
(Royal Society of Chemistry, 2017)
We report experimental and theoretical investigations of nitrogen doped graphene. A low-pressure Chemical Vapor Deposition (CVD) system was used to grow large-area graphene on copper foil, using ethylene as the carbon ...
Layer- and strain-dependent optoelectronic properties of hexagonal AlN
(American Physical Society, 2015-10)
Motivated by the recent synthesis of layered hexagonal aluminum nitride (h-AlN), we investigate its layer- and strain-dependent electronic and optical properties by using first-principles methods. Monolayer h-AlN is a ...