Now showing items 1-5 of 5
Differences in the densities of charged defect states and kinetics of Staebler-Wronski effect in undoped (nonintrinsic) hydrogenated amorphous silicon thin films
(American Institute of Physics Publising, 1997-04)
A variety of undoped (nonintrinsic) hydrogenated amorphous silicon (a-Si:H) thin films was studied in greater detail using steady-state photoconductivity, σph, subband-gap absorption, α(hν), steady-state photocarrier grating ...
Improvement of optical and electrical properties of ITO thin films by electro-annealing
The effect of electro-annealing in vacuum and air on the optical and electrical properties of ITO thin films grown by large area DC magnetron sputtering was investigated. Moreover, the performances of the electro-annealed ...
The effect of annealing temperature on the optical properties of a ruthenium complex thin film
The stability of the optical parameters of a ruthenium polypyridyl complex (Ru-PC K314) film under varying annealing temperatures between 278 K and 673 K was investigated. The ruthenium polypyridyl complex thin film was ...
The effects of the post-annealing time on the growth mechanism of Bi2Sr2Ca1Cu2O8+ thin films produced on MgO (100) single crystal substrates by pulsed laser deposition (PLD)
Bi2Sr2Ca1Cu2O8+δï thin films were deposited on MgO (100) substrates by pulsed laser deposition (PLD). The effects of post-annealing time on the phase formation, the structural and superconducting properties of the films ...
Defect reduction study of molecular beam epitaxially grown CdTe thin flims by ex-situ annealing
(Izmir Institute of Technology, 2015-10)
Molecular Beam Epitaxy (MBE) grown CdTe thin films were annealed in this study to decrease the number density of defects. For annealing, a system was designed and constructed. During anneals; anneal temperature, anneal ...