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Production and characterization of HfO2 high-k dielectric layers by sputtering technique
(İzmir Institute of Technology, 2010)
HfO2 thin films have been deposited on Si by in-situ spectroscopic ellipsometric sputtering technique. The grown films have been examined by various diagnostic and analysis techniques (Spectroscopic Ellipsometer (SE), FTIR, ...
Impact of incorporated oxygen quantity on optical, structural and dielectric properties of reactive magnetron sputter grown high-κ HfO2/Hf/Si thin film
High-κ hafnium-oxide thin films have been fabricated by radio frequency (rf) reactive magnetron sputtering technique. To avoid formation of an undesired interfacial suboxide layer between Si and high-κ film, prior to HfO2 ...
Growth of Cu2ZnSnS4 absorber layer on flexible metallic substrates for thin film solar cell applications
In this work, Cu2ZnSnS4 (CZTS) absorber layers were fabricated using a two-stage process. Sequentially deposited Cu-Zn-Sn thin film layers on metallic foils were annealed in an Ar + S2(g) atmosphere. We aimed to investigate ...