Browsing by Subject "Gallium arsenide"
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Growth and characterization of CdTe absorbers on GaAs by MBE for high concentration PV solar cells (Wiley, 2015-11)CdTe based II-VI absorbers are promising candidates for high concentration PV solar cells with an ideal band gap for AM1.5 solar radiation. In this study, we propose single crystal CdTe absorbers grown on GaAs substrates ...
(Springer, 2016-10-01)Molecular beam epitaxy (MBE) growth of thin (∼2 μm) CdTe layers characterized by high crystal quality and low defect density on lattice mismatched substrates, such as GaAs and Si, has thus far been difficult to achieve. ...