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Browsing by Author "Cantaş, Ayten"
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Comparision of in situ spectroscopic ellipsometer and ex situ x-ray photoelectron spectroscopy depth profiling analysis of HfO2/Hf/Si multilayer structure
Cantaş, Ayten; Özyüzer, Lütfi; Aygün, Gülnur (Institute of Physics Publishing, 2018-09)A HfO2 film was grown by RF magnetron sputtering technique on a Si substrate Using in situ Spectroscopic Ellipsometry (SE), the film thickness and refractive index were examined as a function of deposition time. Ex situ ... -
Effects of physical growth conditions on the structural and optical properties of sputtered grown thin HfO2 films
Aygün, Gülnur; Cantaş, Ayten; Şimşek, Yılmaz; Turan, Raşit (Elsevier, 2011-06)HfO2 thin films were prepared by reactive DC magnetron sputtering technique on (100) p-Si substrate. The effects of O2/Ar ratio, substrate temperature, sputtering power on the structural properties of HfO2 grown films were ... -
Ge nanocrystals embedded in SiO2 in MOS based radiation sensors
Aktağ, Aliekber; Yılmaz, Ercan; Mogaddam, Nader A.P.; Aygün, Gülnur; Cantaş, Ayten; Turan, Raşit (Elsevier, 2010-11)In this work, the effects of gamma radiation on the Raman spectra of Ge nanocrystals embedded in SiO2 have been investigated. SiO2 films containing nanoparticles of Ge were grown using the r.f.-magnetron sputtering technique. ... -
Growth of Cu2ZnSnS4 absorber layer on flexible metallic substrates for thin film solar cell applications
Yazıcı, Şebnem; Olgar, Mehmet Ali; Akça, Fatime Gülşah; Cantaş, Ayten; Kurt, Metin; Aygün, Gülnur; Tarhan, Enver; Yanmaz, Ekrem; Özyüzer, Lütfi (Elsevier, 2015-08)In this work, Cu2ZnSnS4 (CZTS) absorber layers were fabricated using a two-stage process. Sequentially deposited Cu-Zn-Sn thin film layers on metallic foils were annealed in an Ar + S2(g) atmosphere. We aimed to investigate ... -
Impact of incorporated oxygen quantity on optical, structural and dielectric properties of reactive magnetron sputter grown high-κ HfO2/Hf/Si thin film
Cantaş, Ayten; Aygün, Gülnur; Turan, Raşit (Elsevier, 2014-11)High-κ hafnium-oxide thin films have been fabricated by radio frequency (rf) reactive magnetron sputtering technique. To avoid formation of an undesired interfacial suboxide layer between Si and high-κ film, prior to HfO2 ... -
Importance of CdS buffer layer thickness on Cu2ZnSnS4-based solar cell efficiency
Cantaş, Ayten; Türkoğlu, Fulya; Meriç, Ece; Akça, Fatime Gülşah; Özdemir, Mehtap; Tarhan, Enver; Özyüzer, Lütfi; Aygün, Gülnur (Institute of Physics Publishing, 2018-06)Cu2ZnSnS4 (CZTS) thin films were grown on Mo-coated soda lime glass (SLG) substrates by the sulfurization of DC magnetron-sputtered Zn, Sn and Cu metallic precursors under a sulfur atmosphere at 550 °C for 45 min. Understanding ... -
In-situ spectroscopic ellipsometry and structural study of HfO2 thin films deposited by radio frequency magnetron sputtering
Cantaş, Ayten; Aygün, Gülnur; Basa, Deepak Kumar (American Institute of Physics, 2014-08-28)We have investigated the reduction of unwanted interfacial SiO2 layer at HfO2/Si interface brought about by the deposition of thin Hf metal buffer layer on Si substrate prior to the deposition of HfO2 thin films for possible ... -
Production and characterization of HfO2 high-k dielectric layers by sputtering technique
Cantaş, Ayten (Izmir Institute of Technology, 2010)HfO2 thin films have been deposited on Si by in-situ spectroscopic ellipsometric sputtering technique. The grown films have been examined by various diagnostic and analysis techniques (Spectroscopic Ellipsometer (SE), FTIR, ...
