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dc.contributor.authorGüneş, Mehmet
dc.contributor.authorJohanson, Robert E.
dc.contributor.authorKasap, Safa O.
dc.contributor.authorYang, Jeffrey C.
dc.contributor.authorGuha, Subhendu
dc.date.accessioned2019-03-07T08:27:14Z
dc.date.available2019-03-07T08:27:14Z
dc.date.issued2002-04
dc.identifier.citationGüneş, M., Johanson, R. E., Kasap, S. O., Yang, J. C., and Guha, S. (2002). Conductance fluctuations in undoped hydrogenated amorphous silicon-germanium alloy thin films. Journal of Non-Crystalline Solids, 299-302(Part 1), 425-429. doi:10.1016/S0022-3093(01)01016-Xen_US
dc.identifier.issn0022-3093
dc.identifier.urihttps://doi.org/10.1016/S0022-3093(01)01016-X
dc.identifier.urihttp://hdl.handle.net/11147/7138
dc.description.abstractWe report coplanar conductance fluctuations of device quality, undoped hydrogenated amorphous silicon-germanium alloy thin films (a-SiGe:H) measured from 430 to 490 K. The a-SiGe:H alloys produce noise power spectra similar to coplanar undoped a-Si:H films in the same temperature range. The noise power spectrum S(n) does not fit a single 1/fα power law but rather has two distinct regions, each accurately fitted by a power law, but with different slopes. The low frequency slope α1 is similar to that observed in undoped a-Si:H films varying from 1.30 to 1.46 for different Ge concentrations and shows a slight temperature dependence. At higher frequencies, the slope α2 is less than unity and temperature independent but depends on the Ge content of the film. α2 decreases from 0.60 for no Ge (pure a-Si:H) to 0.15 for 40 at.% Ge. The noise power at lower frequencies increases and at higher frequencies decreases substantially as the temperature increases from 430 to 490 K. We infer that similar noise mechanisms are operating in undoped a-SiGe:H and a-Si:H films but that the Ge content is influencing the noise, particularly the slope at higher frequencies. In addition, the noise has the expected quadratic dependence on bias current and obeys Gaussian statistics.en_US
dc.description.sponsorshipNatural Sciences and Engineering Research Council of Canadaen_US
dc.language.isoengen_US
dc.publisherElsevieren_US
dc.relation.isversionof10.1016/S0022-3093(01)01016-Xen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectAmorphous filmsen_US
dc.subjectNoise power spectrumen_US
dc.subjectThermoanalysisen_US
dc.subjectSilicon alloysen_US
dc.titleConductance fluctuations in undoped hydrogenated amorphous silicon-germanium alloy thin filmsen_US
dc.typearticleen_US
dc.contributor.authorIDTR1299en_US
dc.contributor.iztechauthorGüneş, Mehmet
dc.relation.journalJournal of Non-Crystalline Solidsen_US
dc.contributor.departmentIzmir Institute of Technology. Physicsen_US
dc.identifier.volume299-302en_US
dc.identifier.issuePart 1en_US
dc.identifier.startpage425en_US
dc.identifier.endpage429en_US
dc.identifier.wosWOS:000175757400085
dc.identifier.scopusSCOPUS:2-s2.0-0036540223


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