Show simple item record

dc.contributor.authorCantaş, Ayten
dc.contributor.authorÖzyüzer, Lütfi
dc.contributor.authorAygün, Gülnur
dc.date.accessioned2019-02-21T07:21:33Z
dc.date.available2019-02-21T07:21:33Z
dc.date.issued2018-09
dc.identifier.citationCantaş, A., Özyüzer, L., and Aygün, G. (2018). Comparision of in situ spectroscopic ellipsometer and ex situ x-ray photoelectron spectroscopy depth profiling analysis of HfO2/Hf/Si multilayer structure. Materials Research Express, 5(9). doi:10.1088/2053-1591/aad856en_US
dc.identifier.issn2053-1591
dc.identifier.urihttp://doi.org/10.1088/2053-1591/aad856
dc.identifier.urihttp://hdl.handle.net/11147/7123
dc.description.abstractA HfO2 film was grown by RF magnetron sputtering technique on a Si substrate Using in situ Spectroscopic Ellipsometry (SE), the film thickness and refractive index were examined as a function of deposition time. Ex situ x-ray Photoelectron Spectroscopy (XPS) was used in depth profile mode to determine the phase evolution of HfO2/Hf/Si multilayer structure after the growth process. The chemical composition and the crystal structure of the film were investigated by Fourier Transform Infrared (FTIR) spectroscopic measurements and x-ray Diffraction in Grazing Incidence (GI-XRD) mode, respectively. The results showed that the film was grown in the form of HfO2 film. According to SE analysis, reactive deposition of HfO2 directly on Hf/Si results to SiO2 interface of about 2 nm. The final HfO2 films thickness is 5.4 nm. After a certain period of time, the XPS depth profile revealed that the film was in the form of Hf-rich Hf silicate with SiO2 interfacial layer. In reference to XPS quantification analysis from top to bottom of film, the atomic concentration of Hf element reduces from 19.35% to 7.13%, whereas Si concentration increases from 22.99% to 74.89%. The phase change of HfO2 film with time is discussed in details.en_US
dc.description.sponsorshipThe Scientific and Technological Research Council of Turkey (TUBITAK project 113F349)en_US
dc.language.isoengen_US
dc.publisherInstitute of Physics Publishingen_US
dc.relationinfo:eu-repo/grantAgreement/TUBITAK/MFAG/113F349en_US
dc.relation.isversionof10.1088/2053-1591/aad856en_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectFTIRen_US
dc.subjectHigh-k dielectric materialen_US
dc.subjectMultilayer structuresen_US
dc.subjectSpectroscopic Ellipsometryen_US
dc.subjectReactive RF sputteringen_US
dc.titleComparision of in situ spectroscopic ellipsometer and ex situ x-ray photoelectron spectroscopy depth profiling analysis of HfO2/Hf/Si multilayer structureen_US
dc.typearticleen_US
dc.contributor.authorIDTR5135en_US
dc.contributor.authorIDTR39698en_US
dc.contributor.iztechauthorCantaş, Ayten
dc.contributor.iztechauthorÖzyüzer, Lütfi
dc.contributor.iztechauthorAygün, Gülnur
dc.relation.journalMaterials Research Expressen_US
dc.contributor.departmentIzmir Institute of Technology. Physicsen_US
dc.identifier.volume5en_US
dc.identifier.issue9en_US
dc.identifier.wosWOS:000441828300002
dc.identifier.scopusSCOPUS:2-s2.0-85052301854
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record