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dc.contributor.authorYanılmaz, Alper
dc.contributor.authorTomak, Aysel
dc.contributor.authorAkbalı, Barış
dc.contributor.authorBacaksız, Cihan
dc.contributor.authorÖzçeri, Elif
dc.contributor.authorArı, Ozan
dc.contributor.authorSenger, Ramazan Tuğrul
dc.contributor.authorSelamet, Yusuf
dc.contributor.authorZareie, Hadi M.
dc.date.accessioned2017-09-20T08:29:58Z
dc.date.available2017-09-20T08:29:58Z
dc.date.issued2017
dc.identifier.citationYanılmaz, A., Tomak, A., Akbalı, B., Bacaksız, C., Özçeri, E., Arı, O., Senger, R.T., Selamet, Y., and Zareie, H. M. (2017). Nitrogen doping for facile and effective modification of graphene surfaces. Royal Society of Chemistry, 7(45), 28383-28392. doi:10.1039/c7ra03046ken_US
dc.identifier.issn2046-2069
dc.identifier.urihttp://doi.org/10.1039/c7ra03046k
dc.identifier.urihttp://hdl.handle.net/11147/6281
dc.description.abstractWe report experimental and theoretical investigations of nitrogen doped graphene. A low-pressure Chemical Vapor Deposition (CVD) system was used to grow large-area graphene on copper foil, using ethylene as the carbon source. Nitrogen-doped graphene (N-graphene) was prepared by exposing the graphene transferred to different substrates to atomic nitrogen plasma. The effect of varying nitrogen flow rates on doping of graphene was investigated while keeping the power and time constant during the process. The N-graphene was characterized via Raman Spectroscopy, X-ray Photoelectron Spectroscopy (XPS), Scanning Tunneling Microscopy and Spectroscopy (STM and STS), and Fourier Transform Infrared spectroscopy (FTIR). Raman mapping of N-graphene was also performed to show homogeneity of nitrogen on the graphitic lattice. XPS results have revealed the presence of different nitrogen configurations in the graphitic lattice with similar doping concentrations. Density functional theory (DFT) based calculations showed that the periodic adsorption of N atoms predominantly occurs on top of the C atoms rather than through substitution of C in our N-graphene samples. Our results indicate a feasible procedure for producing N-graphene with homogenous and effective doping which would be valuable in electronic and optical applications.en_US
dc.description.sponsorshipIZTECH; TUBITAK (112T946)en_US
dc.language.isoengen_US
dc.publisherRoyal Society of Chemistryen_US
dc.relationinfo:eu-repo/grantAgreement/TUBITAK/TBAG/112T946en_US
dc.relation.isversionof10.1039/c7ra03046ken_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectGrapheneen_US
dc.subjectDoping concentrationen_US
dc.subjectNitrogen plasmaen_US
dc.subjectEthyleneen_US
dc.subjectDensity functional theoryen_US
dc.titleNitrogen doping for facile and effective modification of graphene surfacesen_US
dc.typearticleen_US
dc.contributor.authorIDTR160243en_US
dc.contributor.authorIDTR2199en_US
dc.contributor.iztechauthorYanılmaz, Alper
dc.contributor.iztechauthorTomak, Aysel
dc.contributor.iztechauthorAkbalı, Barış
dc.contributor.iztechauthorBacaksız, Cihan
dc.contributor.iztechauthorÖzçeri, Elif
dc.contributor.iztechauthorArı, Ozan
dc.contributor.iztechauthorSenger, Ramazan Tuğrul
dc.contributor.iztechauthorSelamet, Yusuf
dc.relation.journalRSC Advancesen_US
dc.contributor.departmentİYTE, Fen Fakültesi, Fizik Bölümüen_US
dc.identifier.volume7en_US
dc.identifier.issue45en_US
dc.identifier.startpage28383en_US
dc.identifier.endpage28392en_US
dc.identifier.wosWOS:000402999300051
dc.identifier.scopusSCOPUS:2-s2.0-85021640404


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