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dc.contributor.authorYağmurcukardeş, Nesli
dc.contributor.authorAydın, Hasan
dc.contributor.authorCan, Mustafa
dc.contributor.authorYanılmaz, Alper
dc.contributor.authorMermer, Ömer
dc.contributor.authorOkur, Salih
dc.contributor.authorSelamet, Yusuf
dc.date.accessioned2017-07-18T07:01:15Z
dc.date.available2017-07-18T07:01:15Z
dc.date.issued2016
dc.identifier.citationYağmurcukardeş, N., Aydın, H., Can, M., Yanılmaz, A., Mermer, Ö., Okur, S., and Selamet, Y. (2016). Effect of aromatic SAMs molecules on graphene/silicon schottky diode performance. ECS Journal of Solid State Science and Technology, 5(7), M69-M73. doi:10.1149/2.0141607jssen_US
dc.identifier.issn2162-8769
dc.identifier.urihttp://doi.org/10.1149/2.0141607jss
dc.identifier.urihttp://hdl.handle.net/11147/5942
dc.description.abstractAu/n-Si/Graphene/Au Schottky diodes were fabricated by transferring atmospheric pressure chemical vapor deposited (APCVD) graphene on silicon substrates. Graphene/n-Si interface properties were improved by using 5-[(3-methylphenyl)(phenyl) amino]isophthalic acid (MePIFA) and 5-(diphenyl)amino]isophthalic acid (DPIFA) aromatic self-assembled monolayer (SAM) molecules. The surface morphologies of modified and non-modified films were investigated by atomic force microscopy and scanning electron microscopy. The surface potential characteristics were obtained by Kelvin-probe force microscopy and found as 0.158 V, 0.188 V and 0,383 V as a result of SAMs modification. The ideality factors of n-Si/Graphene, n-Si/MePIFA/Graphene and n-Si/DPIFA/Graphene diodes were found as 1.07, 1.13 and 1.15, respectively. Due to the chain length of aromatic organic MePIFA and DPIFA molecules, also the barrier height φB values of the devices were decreased. While the barrier height of n-Si/Graphene diode was obtained as 0.931 eV, n-Si/MePIFA/Graphene and n-Si/DPIFA/Graphene diodes have barrier height of 0.820 and 0.720 eV, respectively.en_US
dc.description.sponsorshipThe Scientific and Technical Research Council of Turkey (112T946)en_US
dc.language.isoengen_US
dc.publisherElectrochemical Societyen_US
dc.relationinfo:eu-repo/grantAgreement/TUBITAK/TBAG/112T946en_US
dc.relation.isversionof10.1149/2.0141607jssen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectSelf assembled monolayersen_US
dc.subjectAromatic compoundsen_US
dc.subjectSiliconen_US
dc.subjectGrapheneen_US
dc.subjectBarrier heightsen_US
dc.subjectAtmospheric pressureen_US
dc.titleEffect of aromatic SAMs molecules on graphene/silicon schottky diode performanceen_US
dc.typearticleen_US
dc.contributor.iztechauthorYağmurcukardeş, Nesli
dc.contributor.iztechauthorAydın, Hasan
dc.contributor.iztechauthorYanılmaz, Alper
dc.contributor.iztechauthorSelamet, Yusuf
dc.relation.journalECS Journal of Solid State Science and Technologyen_US
dc.contributor.departmentIzmir Institute of Technology. Materials Science and Engineeringen_US
dc.identifier.volume5en_US
dc.identifier.issue7en_US
dc.identifier.startpageM69en_US
dc.identifier.endpageM73en_US
dc.identifier.wosWOS:000378840000029
dc.identifier.scopusSCOPUS:2-s2.0-84978081410
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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