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dc.contributor.authorKasap, Safa O.
dc.contributor.authorGüneş, Mehmet
dc.contributor.authorJohanson, Robert E.
dc.contributor.authorWang, Q.
dc.contributor.authorYang, Jeffrey
dc.contributor.authorGuha, Subhendu
dc.date.accessioned2016-05-27T11:53:26Z
dc.date.available2016-05-27T11:53:26Z
dc.date.issued2003-10
dc.identifier.citationKasap, S. O., Güneş, M., Johanson, R. E., Wang, Q., Yang, J., and Guha, S. (2003). Conductance fluctuations in a-Si:H: Effects of alloying and device structure. Journal of Materials Science: Materials in Electronics, 14(10-12), 693-696. doi:10.1023/A:1026127020267en_US
dc.identifier.issn0957-4522
dc.identifier.urihttp://doi.org/10.1023/A:1026127020267
dc.identifier.urihttp://hdl.handle.net/11147/4673
dc.description.abstractWe present measurements of conductance noise in undoped a-Si:H and a-SiGe: H thin films in both a transverse and coplanar electrode geometry. For a-Si:H with coplanar electrodes, the noise spectrum is not a pure f-α power law but consists of two linear regions with different slope parameters α. The spectral shape and its temperature dependence are similar for all samples, regardless of the growth technique. Adding Ge results in qualitatively similar spectra; however, α at high frequencies and the temperature dependence are altered. For both a-Si:H and a-SiGe:H with transverse electrodes, the noise spectra are pure f-α power laws, and α decreases with the Ge content.en_US
dc.description.sponsorshipNSERCen_US
dc.language.isoengen_US
dc.publisherKluwer Academic Publishersen_US
dc.relation.isversionof10.1023/A:1026127020267en_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectSilanesen_US
dc.subjectConductance noisesen_US
dc.subjectAlloyingen_US
dc.subjectElectrodesen_US
dc.subjectPlasma enhanced chemical vapor depositionen_US
dc.titleConductance fluctuations in a-Si:H: Effects of alloying and device structureen_US
dc.typeconferenceObjecten_US
dc.contributor.authorIDTR1299en_US
dc.relation.journalJournal of Materials Science: Materials in Electronicsen_US
dc.contributor.departmentIzmir Institute of Technology. Physicsen_US
dc.identifier.volume14en_US
dc.identifier.issue10-12en_US
dc.identifier.startpage693en_US
dc.identifier.endpage696en_US
dc.identifier.wosWOS:000185962400022
dc.identifier.scopusSCOPUS:2-s2.0-0242380245
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US


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