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dc.contributor.authorJohanson, Robert E.
dc.contributor.authorGüneş, Mehmet
dc.contributor.authorKasap, Safa O.
dc.date.accessioned2016-04-22T08:28:03Z
dc.date.available2016-04-22T08:28:03Z
dc.date.issued2000-05
dc.identifier.citationJohanson, R. E., Güneş, M., and Kasap, S. O. (2000). 1/f Noise in doped and undoped amorphous silicon. Journal of Non-Crystalline Solids, 266-269(PART 1), 242-246. doi:10.1016/S0022-3093(99)00832-7en_US
dc.identifier.issn0022-3093
dc.identifier.urihttp://doi.org/10.1016/S0022-3093(99)00832-7
dc.identifier.urihttp://hdl.handle.net/11147/4537
dc.description.abstractWe measured the spectrum of conductance fluctuations in n-type, p-type, and undoped hydrogenated amorphous silicon (a-Si:H) as a function of temperature. In general, the spectra can be fit to a power law, 1/fα, although in the p-type and undoped samples deviations from a strict power law occur. For n-type and p-type samples, the noise magnitude increases with temperature by approximately a factor of 5 from 295 to 450 K. The slope parameter, α, also increases with temperature in the p-type samples from near unity to 1.4 but not in the n-type sample where it remains near 1.05 independent of temperature. The undoped sample could be measured only over a limited range of elevated temperatures, but α does trend larger. The undoped and lightly doped material have similar noise levels but larger p-type doping reduces the noise by two orders of magnitude. Correlation measurements indicate the 1/f noise is Gaussian for all samples. However, intermittent random-telegraph noise is observed in n-type material.en_US
dc.language.isoengen_US
dc.publisherElsevieren_US
dc.relation.isversionof10.1016/S0022-3093(99)00832-7en_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectSiliconen_US
dc.subjectRandom-telegraph noiseen_US
dc.subjectElectronic noiseen_US
dc.title1/f Noise in doped and undoped amorphous siliconen_US
dc.typearticleen_US
dc.contributor.authorIDTR1299en_US
dc.contributor.iztechauthorGüneş, Mehmet
dc.relation.journalJournal of Non-Crystalline Solidsen_US
dc.contributor.departmentIzmir Institute of Technology. Physicsen_US
dc.identifier.volume266-269en_US
dc.identifier.issuePART 1en_US
dc.identifier.startpage242en_US
dc.identifier.endpage246en_US
dc.identifier.wosWOS:000087189800045
dc.identifier.scopusSCOPUS:2-s2.0-0000709001
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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