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dc.contributor.authorGüden, Mustafa
dc.contributor.authorPiprek, Joachim
dc.date.accessioned2015-12-10T08:26:57Z
dc.date.available2015-12-10T08:26:57Z
dc.date.issued1996
dc.identifier.citationGüden, M., and Piprek, J. (1996). Material parameters of quaternary III–V semiconductors for multilayer mirrors at 1:55 m wavelength. Modelling and Simulation in Materials Science and Engineering, 4(4), 349-357.en_US
dc.identifier.issn0965-0393
dc.identifier.urihttp://hdl.handle.net/11147/4385
dc.description.abstractNine quaternary (Al,Ga,In) - (P,As,Sb) semiconductor compounds lattice matched to InP are investigated theoretically. Direct bandgap, refractive index at wavelength, and thermal conductivity are calculated as a function of the composition. These material properties are important, e.g. in distributed Bragg reflectors of vertical-cavity lasers. The alloy systems AlGaAsSb, AlGaPSb and GaInPSb are found to promise better performance of those mirrors than the common InGaAsP system.en_US
dc.language.isoengen_US
dc.publisherIOP Publishingen_US
dc.relation.isversionof10.1088/0965-0393/4/4/002en_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectSemiconductorsen_US
dc.subjectGallium arsenide semiconductorsen_US
dc.subjectAlloysen_US
dc.subjectOptoelectronicsen_US
dc.titleMaterial parameters of quaternary III–V semiconductors for multilayer mirrors at 1:55 μm wavelengthen_US
dc.typearticleen_US
dc.contributor.authorIDTR114738en_US
dc.contributor.iztechauthorGüden, Mustafa
dc.relation.journalModelling and Simulation in Materials Science and Engineeringen_US
dc.contributor.departmentIzmir Institute of Technology. Mechanical Engineeringen_US
dc.identifier.volume4en_US
dc.identifier.issue4en_US
dc.identifier.startpage349en_US
dc.identifier.endpage357en_US
dc.identifier.wosWOS:A1996VQ55600002
dc.identifier.scopusSCOPUS:2-s2.0-0030182085
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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