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dc.contributor.authorWang, X. J.
dc.contributor.authorTarı, Süleyman
dc.contributor.authorSporken, R.
dc.contributor.authorSivananthan, S.
dc.date.accessioned2017-01-18T07:14:25Z
dc.date.available2017-01-18T07:14:25Z
dc.date.issued2011-02-01
dc.identifier.citationWang, X. J., Tarı, S., Sporken, R., and Sivananthan, S. (2011). ZnTe/GaAs(2 1 1)B heterojunction valence band discontinuity measured by X-ray photoelectron spectroscopy. Applied Surface Science, 257 (8), 3346-3349. doi:10.1016/j.apsusc.2010.11.019en_US
dc.identifier.issn0169-4332
dc.identifier.urihttp://doi.org/10.1016/j.apsusc.2010.11.019
dc.identifier.urihttp://hdl.handle.net/11147/2807
dc.description.abstractThin ZnTe layers were grown by molecular beam epitaxy on single crystal GaAs(2 1 1)B substrates. Reflection high energy electron diffraction monitored the deoxidation of substrate and entire growth process. Valence band offset was calculated with X-ray photoelectron spectroscopy. Also interface formation of the ZnTe/GaAs was studied. Analysis shows that interface is abrupt and calculated valance band offset is 0.25±0.1 eV and indicates type I alignment. The experimental result agrees well with the theoretical predictions involving interface dipole effect as well as electron affinity rule.en_US
dc.description.sponsorshipEPIR Technologies Inc, CEO Dr. Sivalingam Sivananthan, under contract No. IRD-06-UIC0001en_US
dc.language.isoengen_US
dc.publisherElsevier BV.en_US
dc.relation.isversionof10.1016/j.apsusc.2010.11.019en_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectValence band offseten_US
dc.subjectXPSen_US
dc.subjectStrainen_US
dc.subjectIntermixingen_US
dc.subjectEpitaxyen_US
dc.titleZnTe/GaAs(2 1 1)B heterojunction valence band discontinuity measured by X-ray photoelectron spectroscopyen_US
dc.typearticleen_US
dc.contributor.iztechauthorTarı, Süleyman
dc.relation.journalApplied Surface Scienceen_US
dc.contributor.departmentİYTE, Fen Fakültesi, Fizik Bölümüen_US
dc.identifier.volume257en_US
dc.identifier.issue8en_US
dc.identifier.startpage3346en_US
dc.identifier.endpage3349en_US
dc.identifier.wosWOS:000286179800034
dc.identifier.scopusSCOPUS:2-s2.0-78651347250
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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