Faculty of Science / Fen Fakültesi
http://hdl.handle.net/11147/4
2019-05-16T22:17:58ZA1-L10 phase boundaries and anisotropy via multiple-order-parameter theory for an fcc alloy
http://hdl.handle.net/11147/7139
A1-L10 phase boundaries and anisotropy via multiple-order-parameter theory for an fcc alloy
Tanoğlu, Gamze; Braun, Richard J.; Cahn, John W.; McFadden, Geoffrey B.
The dependence of thermodynamic properties of planar interphase boundaries (IPBs) and antiphase boundaries (APBs) in a binary alloy on an fcc lattice is studied as a function of their orientation. Using a recently developed diffuse interface model based on three non-conserved order parameters and the concentration, and a free energy density that gives a realistic phase diagram with one disordered phase (A1) and two ordered phases (L12 and L10) such as occur in the Cu-Au system, we are able to find IPBs and APBs between any pair of phases and domains, and for all orientations. The model includes bulk and gradient terms in a free energy functional, and assumes that there is no mismatch in the lattice parameters for the disordered and ordered phases.We catalog the appropriate boundary conditions for all IPBs and APBs. We then focus on the IPB between the disordered A1 phase and the L10 ordered phase. For this IPB we compute the numerical solution of the boundary value problem to find its interfacial energy, γ as a function of orientation, temperature, and chemical potential (or composition). We determine the equilibrium shape for a precipitate of one phase within the other using the Cahn-Hoffman "-vector" formalism. We find that the profile of the interface is determined only by one conserved and one non-conserved order parameter, which leads to a surface energy which, as a function of orientation, is "transversely isotropic" with respect to the tetragonal axis of the L10 phase. We verify the model's consistency with the Gibbs adsorption equation.
2003-01-01T00:00:00ZConductance fluctuations in undoped hydrogenated amorphous silicon-germanium alloy thin films
http://hdl.handle.net/11147/7138
Conductance fluctuations in undoped hydrogenated amorphous silicon-germanium alloy thin films
Güneş, Mehmet; Johanson, Robert E.; Kasap, Safa O.; Yang, Jeffrey C.; Guha, Subhendu
We report coplanar conductance fluctuations of device quality, undoped hydrogenated amorphous silicon-germanium alloy thin films (a-SiGe:H) measured from 430 to 490 K. The a-SiGe:H alloys produce noise power spectra similar to coplanar undoped a-Si:H films in the same temperature range. The noise power spectrum S(n) does not fit a single 1/fα power law but rather has two distinct regions, each accurately fitted by a power law, but with different slopes. The low frequency slope α1 is similar to that observed in undoped a-Si:H films varying from 1.30 to 1.46 for different Ge concentrations and shows a slight temperature dependence. At higher frequencies, the slope α2 is less than unity and temperature independent but depends on the Ge content of the film. α2 decreases from 0.60 for no Ge (pure a-Si:H) to 0.15 for 40 at.% Ge. The noise power at lower frequencies increases and at higher frequencies decreases substantially as the temperature increases from 430 to 490 K. We infer that similar noise mechanisms are operating in undoped a-SiGe:H and a-Si:H films but that the Ge content is influencing the noise, particularly the slope at higher frequencies. In addition, the noise has the expected quadratic dependence on bias current and obeys Gaussian statistics.
2002-04-01T00:00:00ZCorrelation of tunneling spectra in Bi2Sr2CaCu2O8+δ with the resonance spin excitation
http://hdl.handle.net/11147/7137
Correlation of tunneling spectra in Bi2Sr2CaCu2O8+δ with the resonance spin excitation
Zasadzinski, John F.; Özyüzer, Lütfi; Miyakawa, Nobuaki; Gray, Kenneth E.; Hinks, David G.; Kendziora, Christopher A.
New break-junction tunneling data are reported in Bi2Sr2CaCu2O8+δ over a wide range of hole concentration from underdoped (Tc=74k) to optimal doped (Tc=95k) to overdoped (Tc=48k). The conductances exhibit sharp dips at a voltage, Ω/e, measured with respect to the superconducting gap. Clear trends are found such that the dip strength is maximum at optimal doping and that Ω scales as 4.9kTc over the entire doping range. These features link the dip to the resonance spin excitation and suggest quasiparticle interactions with this mode are important for superconductivity.
2001-08-01T00:00:00ZNMR studies on natural and synthetic Amavadin
http://hdl.handle.net/11147/7136
NMR studies on natural and synthetic Amavadin
Armstrong, Elaine M.; Collison, David; Ertok, Nigar; Garner, Catherine D.
The stereochemistry of isolated natural product Amavadin, which contains a 1:2 complex of V(IV) with N-hydroxyimino-2,2′-dipropionic acid (HIDPAH3), and some synthetic complexes have been investigated. Amavadin was isolated from Amanita muscaria and oxidized with [NH4]2[Ce(NO3)6]. H2[Δ-V(S,S-HIDPA)2].3H2O, H2[Δ,Λ-V(S,S-HIDPA)2].3H2O and their equivalent oxidized species have been synthesized and characterized spectroscopically. A combination of COSY, NOE, 1H, 13C-NMR and CD spectroscopy have been used to prove that the isolated natural product Amavadin consists of an almost equal mixture of the Δ- and Λ-isomers of [V(S,S-HIDPA)2]2-.
The stereochemistry of isolated natural product Amavadin, which contains a 1:2 complex of V(IV) with N-hydroxyimino-2,2'-dipropionic acid (HIDPAH3), and some synthetic complexes have been investigated. Amavadin was isolated from Amanita muscaria and oxidized with [NH4]2[Ce(NO3)6]. H2[Δ-V(S,S-HIDPA)2].3H2O, H2[Δ,Λ-V(S,S-HIDPA)2].3H2O and their equivalent oxidized species have been synthesized and characterized spectroscopically. A combination of COSY, NOE, 1H, 13C-NMR and CD spectroscopy have been used to prove that the isolated natural product Amavadin consists of an almost equal mixture of the Δ- and Λ-isomers of [V(S,S-HIDPA)2]2-.
2000-10-01T00:00:00Z