Browsing by Author "Turan, Raşit"
Now showing items 1-12 of 12
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2-D analysis of Ge implanted SiO2 surfaces by laser-induced breakdown spectroscopy
Yalçın, Şerife; Örer, Sabiha; Turan, Raşit (Elsevier, 2008-10)2-D elemental distribution of Ge in silicon oxide substrates with differing implantation doses of between 3 × 1016 cm- 2 and 1.5 × 1017 cm- 2 has been investigated by Laser-Induced Breakdown Spectroscopy (LIBS). Spectral ... -
Developing a trilayer processing technique for superconducting YBa 2Cu3O7-δ thin films by using Ge ion implantation
Avcı, İlbeyi; Tepe, Mustafa; Öktem, B.; Serincan, Uğur; Turan, Raşit; Abukay, Doğan (IOP Publishing, 2005-04)For making trilayer superconducting devices based on YBa2Cu 3O7-δ (YBCO) thin film processing, we developed a new technique by employing Ge ion implantation. A YBCO thin film of 150 nm thickness having high c-axis orientation ... -
Effects of physical growth conditions on the structural and optical properties of sputtered grown thin HfO2 films
Aygün, Gülnur; Cantaş, Ayten; Şimşek, Yılmaz; Turan, Raşit (Elsevier, 2011-06)HfO2 thin films were prepared by reactive DC magnetron sputtering technique on (100) p-Si substrate. The effects of O2/Ar ratio, substrate temperature, sputtering power on the structural properties of HfO2 grown films were ... -
Electrical and dielectrical properties of tantalum oxide films grown by Nd:YAG laser assisted oxidation
Aygün, Gülnur; Turan, Raşit (Elsevier, 2008-11-28)Tantalum pentoxide (Ta2O5) thin films (20 to 44 nm) have been grown by 1064 nm Nd:YAG laser oxidation of Ta deposited films with various thickness on Si. Fourier Transform Infrared (FTIR) spectrum, thickness distribution, ... -
Electrical and magnetic properties of Si ion implanted YBa 2Cu3O7-δ thin films and microbridges
Avcı, İlbeyi; Tepe, Mustafa; Serincan, Uğur; Öktem, B.; Turan, Raşit; Abukay, Doğan (Elsevier, 2004-11)Fabrication of superconducting bilayer YBa2Cu3O 7-δ (YBCO) thin film structure by Si ion implantation and properties of microbridge patterned on that are presented. YBCO thin film of 150 nm thickness was grown on single ... -
Evolution of SiO2/Ge/HfO2(Ge) multilayer structure during high temperature annealing
Şahin, D.; Yıldız, İlker; Gençer İmer, Arife; Aygün, Gülnur; Slaoui, A.; Turan, Raşit (Elsevier, 2010-02)Use of germanium as a storage medium combined with a high-k dielectric tunneling oxide is of interest for non-volatile memory applications. The device structure consists of a thin HfO2 tunneling oxide with a Ge layer either ... -
Ge nanocrystals embedded in SiO2 in MOS based radiation sensors
Aktağ, Aliekber; Yılmaz, Ercan; Mogaddam, Nader A.P.; Aygün, Gülnur; Cantaş, Ayten; Turan, Raşit (Elsevier, 2010-11)In this work, the effects of gamma radiation on the Raman spectra of Ge nanocrystals embedded in SiO2 have been investigated. SiO2 films containing nanoparticles of Ge were grown using the r.f.-magnetron sputtering technique. ... -
Impact of incorporated oxygen quantity on optical, structural and dielectric properties of reactive magnetron sputter grown high-κ HfO2/Hf/Si thin film
Cantaş, Ayten; Aygün, Gülnur; Turan, Raşit (Elsevier, 2014-11)High-κ hafnium-oxide thin films have been fabricated by radio frequency (rf) reactive magnetron sputtering technique. To avoid formation of an undesired interfacial suboxide layer between Si and high-κ film, prior to HfO2 ... -
Oxidation of Si surface by a pulsed Nd: YAG laser
Aygün Özyüzer, Gülnur; Atanassova, Elenada A.; Alaçakır, Ali; Özyüzer, Lütfi; Turan, Raşit (IOP Publishing, 2004-06)SiO2 thin films have been obtained by 1064 nm Nd: YAG laser oxidation of p-Si in the presence of O2. The thickness uniformity, dielectric and electrical properties of the layers have been studied. The effect of both the ... -
Properties of reactive O2 ion beam sputtered TiO2 on Si wafers
Ulucan, Savaş; Aygün, Gülnur; Özyüzer, Lütfi; Eğilmez, M.; Turan, Raşit (National Institute of Optoelectronics, 2005-02)TiO2 thin films were deposited on silicon (100) p-type wafers, using the reactive ion beam sputtering method in high vacuum as an alternative to conventional Argon ion beam sputtering in an O2 environment. Oxygen ions with ... -
Structural and optical characteristics of tantalum oxide grown by pulsed Nd:YAG laser oxidation
Atanassova, Elenada A.; Aygün, Gülnur; Turan, Raşit; Babeva, T. (AVS Science and Technology Society, 2006-03)Tantalum pentoxide (Ta2 O5) thin films (20-50 nm) have been grown by 1064 nm Nd:YAG laser oxidation of Ta film deposited on Si. The chemical bonding, structure, and optical properties of the films have been studied by ... -
XPS study of pulsed Nd:YAG laser oxidized Si
Aygün, Gülnur; Atanassova, Elenada A.; Kostov, K.; Turan, Raşit (Elsevier, 2006-08)X-ray photoelectron spectra (XPS) of thin SiO2 layers grown by pulsed Nd:YAG laser at a substrate temperature of 748 K are presented. The peak decomposition technique combined with depth profiling is employed to identify ...
